Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

Abstract:

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The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in the presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent is observed and correlated with the presence of the oxide and with the charge traps at the semiconductor/oxide interface. Photo-thermally stimulated current measurements evidenced that interface charge accumulation is optically promoted. Rise and fall photo-current measurements provided the time parameter of the trapping phenomenon.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1215-1218

DOI:

10.4028/www.scientific.net/MSF.600-603.1215

Citation:

A. Sciuto et al., "Schottky Barrier Lowering in 4H-SiC Schottky UV Detector", Materials Science Forum, Vols. 600-603, pp. 1215-1218, 2009

Online since:

September 2008

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Price:

$35.00

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