Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

Antonella Sciuto; Fabrizio Roccaforte; Salvatore Di Franco; Vito Raineri

doi:10.4028/www.scientific.net/MSF.600-603.1215

Paper Titles

Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers
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4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
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Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
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Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown
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Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
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The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity
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High Power-Density SiC Converter
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3D Thermal Stress Model for SiC Power Modules
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Efficiency Improvement of PV-Inverters with SiC-DMOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Schottky Barrier Lowering in 4H-SiC Schottky UV...

Schottky Barrier Lowering in 4H-SiC Schottky UV Detector

Abstract:

The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in the presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent is observed and correlated with the presence of the oxide and with the charge traps at the semiconductor/oxide interface. Photo-thermally stimulated current measurements evidenced that interface charge accumulation is optically promoted. Rise and fall photo-current measurements provided the time parameter of the trapping phenomenon.