High Power-Density SiC Converter

Shin Ichi Kinouchi; Hiroshi Nakatake; T. Kitamura; S. Azuma; S. Tominaga; Shuhei Nakata; Yukiyasu Nakao; T. Oi; Tatsuo Oomori

doi:10.4028/www.scientific.net/MSF.600-603.1223

Paper Titles

Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
p.1207

Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown
p.1211

Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
p.1215

The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity
p.1219

High Power-Density SiC Converter
p.1223

3D Thermal Stress Model for SiC Power Modules
p.1227

Efficiency Improvement of PV-Inverters with SiC-DMOSFETs
p.1231

A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFET^TM Switch
p.1235

Summary of SiC Research for Transportation Applications at ORNL
p.1239

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603High Power-Density SiC Converter

High Power-Density SiC Converter

Abstract:

A compact SiC converter having power densities about 9 W/cm3 is designed and fabricated. It is confirmed that the converter operates in a thermally permissive range. The power loss of the module of the converter measured under motor operations is less than 50% of the similar-rating Si module loss. The shrink of the effective volume of DC-link capacitor is necessary to achieve the high power-density SiC converter, in addition to the decrease of the cooling system volume due to the loss reduction caused by SiC devices.