A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFETTM Switch

Won Suk Choi; Sung Mo Young; Richard L. Woodin; A.W. Witt; J. Shovlin

doi:10.4028/www.scientific.net/MSF.600-603.1235

Paper Titles

The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity
p.1219

High Power-Density SiC Converter
p.1223

3D Thermal Stress Model for SiC Power Modules
p.1227

Efficiency Improvement of PV-Inverters with SiC-DMOSFETs
p.1231

A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFET^TM Switch
p.1235

Summary of SiC Research for Transportation Applications at ORNL
p.1239

LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method
p.1245

600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
p.1251

Status of GaN-Based Power Switching Devices
p.1257

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603A High Performance CCM PFC Circuit Using a SiC...

A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFET^TM Switch

Abstract:

SuperFETTM MOSFETs and silicon carbide (SiC) Schottky diodes are applied to continuous conduction mode active power factor correction pre-regulators. SuperFETTM MOSFETs can reduce power losses dramatically with their extremely low RDS(ON) and fast switching. The SiC Schottky diode has virtually zero reverse recovery current and high thermal conductivity, and is close to an ideal diode for a CCM PFC circuit. Due to these outstanding switching characteristics, frequency can be increased. In this paper, the SiC Schottky diode’s and SuperFETTM MOSFET’s performance have been verified in a CCM PFC boost converter. These products can reduce the total power losses and enhance the system efficiency.