LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method

Abstract:

We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of 2.3×105 (cm-2), The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the + and – c directions, resulting in a Na concentration of 4.2 × 1014 (cm-3) in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.

• Periodical: Materials Science Forum (Volumes 600-603)
• Pages: 1245-1250
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.600-603.1245
• Online since: September 2008
• Authors: Fumio Kawamura, Hidekazu Umeda, Masanori Morishita, Ryohei Gejo, Masaki Tanpo, Mamoru Imade, Naoya Miyoshi, Masashi Yoshimura, Yusuke Mori, Takatomo Sasaki, Yasuo Kitaoka
• Keywords: 2 Inch, Gallium Nitride (GaN), Liquid Phase Epitaxy (LPE), Single Crystal

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