LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method

Abstract:

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We succeeded in growing a GaN single crystal substrate with diameter of about two inches using the Na flux method. Our success is due to the development of a new apparatus for growing large GaN single crystals. The crystal grown in this study has a low dislocation density of 2.3×105 (cm-2), The secondary ion mass spectrometry (SIMS) technique demonstrates that the Na element is difficult to be taken in the crystal in both the + and – c directions, resulting in a Na concentration of 4.2 × 1014 (cm-3) in the crystal. Our success in growing a two-inch GaN substrate with a low impurity content and low dislocation density should pave the way for the Na flux method to become a practical application.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1245-1250

DOI:

10.4028/www.scientific.net/MSF.600-603.1245

Citation:

F. Kawamura et al., "LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method", Materials Science Forum, Vols. 600-603, pp. 1245-1250, 2009

Online since:

September 2008

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Price:

$35.00

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