Progress in GaN MOSFET Technology

T. Paul Chow; W. Huang; T. Khan; K. Matocha; Y. Wang

doi:10.4028/www.scientific.net/MSF.600-603.1263

Paper Titles

Summary of SiC Research for Transportation Applications at ORNL
p.1239

LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method
p.1245

600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
p.1251

Status of GaN-Based Power Switching Devices
p.1257

Progress in GaN MOSFET Technology
p.1263

Growth of Thick AlN Layers by High Temperature CVD (HTCVD)
p.1269

Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition
p.1273

Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates
p.1277

Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers
p.1281

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Progress in GaN MOSFET Technology

Progress in GaN MOSFET Technology

Abstract:

GaN MOS capacitors were characterized to optimize the electric properties of SiO2/GaN interface. With optimized anneal conditions, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19 eV near the conduction band and decreases deeper into the band gap. Enhancement-mode GaN MOSFETs were experimentally demonstrated on both p and n GaN epilayer with record high field-effect mobility of 167 cm2/V-s. Lateral RESURF-type GaN MOSFETs exhibit non-destructive high voltage (up to 940V) blocking capabilities. Other characterization including mobility orientation dependence, MOS-gated Hall mobility, current collapse and an NMOS inverter utilizing E/D mode GaN MOSFETs have also been experimentally demonstrated.