Status of GaN-Based Power Switching Devices

Masahiro Hikita; Hiroaki Ueno; Hisayoshi Matsuo; Tetsuzo Ueda; Yasuhiro Uemoto; Kaoru Inoue; Tsuyoshi Tanaka; Daisuke Ueda

doi:10.4028/www.scientific.net/MSF.600-603.1257

Paper Titles

A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFET^TM Switch
p.1235

Summary of SiC Research for Transportation Applications at ORNL
p.1239

LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method
p.1245

600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
p.1251

Status of GaN-Based Power Switching Devices
p.1257

Progress in GaN MOSFET Technology
p.1263

Growth of Thick AlN Layers by High Temperature CVD (HTCVD)
p.1269

Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition
p.1273

Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates
p.1277

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Status of GaN-Based Power Switching Devices

Status of GaN-Based Power Switching Devices

Abstract:

State-of-the-art technologies of GaN-based power switching transistors are reviewed, in which normally-off operation and heat spreading as technical issues. We demonstrate a new operation principle of GaN-based normally-off transistor called Gate Injection Transistor (GIT). The GIT utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to conductivity modulation. The fabricated GIT on Si substrate exhibits the threshold voltage of +1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 800V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors. In addition, we propose the use of poly-AlN as surface passivation. The AlN has at least 200 times higher thermal conductivity than conventional SiN so that it can effectively reduce the channel temperature.