Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers

Abstract:

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The growth process of semipolar GaN(10-12) on Si(001) offcut substrates with 3C-SiC buffer layers has been investigated. From XRD analysis, the difference in the crystal orientation between GaN(10-12) and 3C-SiC(001) has been found to be around 8˚ toward the [110] direction of the 3C-SiC templates. From TEM observations, a cubic-phase AlN seed layer is found to grow on 3C-SiC(001) templates, and the swift transition from the cubic phase to a hexagonal phase leads to the stable growth of hexagonal nitrides. Using 8˚-offcut Si substrates, it is possible to obtain a mirror-like surface of GaN(10-12) using an approximately 10-nm-thick AlN seed layer, which swiftly transitions from cubic AlN to hexagonal GaN.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1281-1284

DOI:

10.4028/www.scientific.net/MSF.600-603.1281

Citation:

Y. Abe et al., "Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers ", Materials Science Forum, Vols. 600-603, pp. 1281-1284, 2009

Online since:

September 2008

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$35.00

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