Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers

Yoshihisa Abe; Jun Komiyama; Toshiyuki Isshiki; Shunichi Suzuki; Akira Yoshida; Hiroshi Ohishi; Hideo Nakanishi

doi:10.4028/www.scientific.net/MSF.600-603.1281

Paper Titles

Progress in GaN MOSFET Technology
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Growth of Thick AlN Layers by High Temperature CVD (HTCVD)
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Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition
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Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates
p.1277

Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers
p.1281

Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique
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Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO₂/Si Substrate
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Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations
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Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
p.1297

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Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers

Abstract:

The growth process of semipolar GaN(10-12) on Si(001) offcut substrates with 3C-SiC buffer layers has been investigated. From XRD analysis, the difference in the crystal orientation between GaN(10-12) and 3C-SiC(001) has been found to be around 8˚ toward the [110] direction of the 3C-SiC templates. From TEM observations, a cubic-phase AlN seed layer is found to grow on 3C-SiC(001) templates, and the swift transition from the cubic phase to a hexagonal phase leads to the stable growth of hexagonal nitrides. Using 8˚-offcut Si substrates, it is possible to obtain a mirror-like surface of GaN(10-12) using an approximately 10-nm-thick AlN seed layer, which swiftly transitions from cubic AlN to hexagonal GaN.