Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

Yutaka Tokuda; Youichi Matsuoka; Hiroyuki Ueda; Osamu Ishiguro; Narumasa Soejima; Tetsu Kachi

doi:10.4028/www.scientific.net/MSF.600-603.1297

Paper Titles

Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers
p.1281

Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique
p.1285

Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO₂/Si Substrate
p.1289

Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations
p.1293

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
p.1297

Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds
p.1301

Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
p.1305

Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films
p.1309

Material Properties of GaN Films Grown on SiC/SOI Substrate
p.1313

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Characterization of Traps in GaN pn Junctions...

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

Abstract:

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.