Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique

Gi Sub Lee; Myung Ok Kyun; Hyun Hee Hwang; Joon Ho An; Won Jae Lee; Byoung Chul Shin; Shigehiro Nishino

doi:10.4028/www.scientific.net/MSF.600-603.1285

Paper Titles

Growth of Thick AlN Layers by High Temperature CVD (HTCVD)
p.1269

Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition
p.1273

Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates
p.1277

Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers
p.1281

Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique
p.1285

Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO₂/Si Substrate
p.1289

Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations
p.1293

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
p.1297

Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds
p.1301

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Surface Morphology of AlN Epitaxial Layer Grown on...

Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique

Abstract:

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce AlN epitaxial layers. In this study, we report the surface morphology of AlN epitaxial layer grown on various substrates such as 3C-SiC (100), 4H-SiC (0001) with 8o off-axis (0001) plane tilted toward the <11 2 0> direction and on-axis 4H-SiC (0001). An average growth rate of AlN layer at 2350oC in 500 Torr of N2 was measured to be about 6μm/hr. While AlN layer grown on the 3C-SiC (100) substrate at 2350oC exhibited polycrystalline structure, AlN epitaxial layer grown on on-axis and off-axis 4H-SiC (0001) substrates had highly c-axis oriented epitaxial structure. In particular, the stacked structure of hexagonal plates was observed on off-axis substrate and the size of the hexagonal plates increased with growth time. Hexagonal plates were observed to be coalesced and the step-bunching was finally disappeared.