Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds

Abstract:

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Defect related carrier recombination and transport properties have been investigated in differently doped HVPE GaN substrates and CVD diamond layers. Carrier generation by interband transitions or by deep-defect photoexcitation were realized for studies of GaN samples by using picosecond pulses at 351 nm or 527 nm. This allowed to create favorable conditions for radiative and nonradiative recombination in the crystals and reveal peculiarities of photoelectrical properties of high and low density plasma in undoped, doped, and compensated GaN. In CVD diamonds, carrier diffusion length was found equal to ~ 0.5 μm and non-dependent on nitrogen density, while the carrier lifetime varied from 0.2 to 0.6 ns.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1301-1304

DOI:

10.4028/www.scientific.net/MSF.600-603.1301

Citation:

K. Jarašiūnas et al., "Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds", Materials Science Forum, Vols. 600-603, pp. 1301-1304, 2009

Online since:

September 2008

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$35.00

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