Material Properties of GaN Films Grown on SiC/SOI Substrate

Abstract:

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Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1313-1316

DOI:

10.4028/www.scientific.net/MSF.600-603.1313

Citation:

Z. C. Feng et al., "Material Properties of GaN Films Grown on SiC/SOI Substrate", Materials Science Forum, Vols. 600-603, pp. 1313-1316, 2009

Online since:

September 2008

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Price:

$35.00

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