Material Properties of GaN Films Grown on SiC/SOI Substrate

Zhe Chuan Feng; C. Tran; Ian T. Ferguson; J.H. Zhao

doi:10.4028/www.scientific.net/MSF.600-603.1313

Paper Titles

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
p.1297

Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds
p.1301

Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
p.1305

Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films
p.1309

Material Properties of GaN Films Grown on SiC/SOI Substrate
p.1313

HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations
p.1317

288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
p.1321

Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
p.1325

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
p.1329

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Material Properties of GaN Films Grown on SiC/SOI Substrate

Abstract:

Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.