Material Properties of GaN Films Grown on SiC/SOI Substrate
Material properties of GaN thin films grown on 3C-SiC/semiconductor-on-insulator (SOI) substrate, by metalorganic chemical vapor deposition technology, are studied by X-ray diffraction, photoluminescence and Raman scattering, with data indicating the high quality of GaN films. Our results have shown that SiC/SOI structures obtained by carbonization have the potential to serve as useful substrates for GaN growth.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
Z. C. Feng et al., "Material Properties of GaN Films Grown on SiC/SOI Substrate", Materials Science Forum, Vols. 600-603, pp. 1313-1316, 2009