Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy

Masanobu Yoshikawa; Masataka Murakami; Takaya Fujita; K. Inoue; K. Matsuda; H. Ishida; Hiroshi Harima

doi:10.4028/www.scientific.net/MSF.600-603.1305

Paper Titles

Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO₂/Si Substrate
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Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations
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Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
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Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds
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Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
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Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films
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Material Properties of GaN Films Grown on SiC/SOI Substrate
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HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations
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288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
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Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy

Abstract:

We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level, using newly developed CL apparatus (SE-SEM-CL). From spectroscopic CL measurement, it has been found that the spectra change dramatically in the vicinity of V-defects in the region of £50nm. The SE-SEM-CL has a potential to detect the CL spectral variation at spatial resolution with £50nm.