Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy

Abstract:

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We have measured cathodoluminescence (CL) spectra in the vicinity of V-defects in InGaN single-quantum-well(SQW) films at nanometer level, using newly developed CL apparatus (SE-SEM-CL). From spectroscopic CL measurement, it has been found that the spectra change dramatically in the vicinity of V-defects in the region of £50nm. The SE-SEM-CL has a potential to detect the CL spectral variation at spatial resolution with £50nm.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1305-1308

DOI:

10.4028/www.scientific.net/MSF.600-603.1305

Citation:

M. Yoshikawa et al., "Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy ", Materials Science Forum, Vols. 600-603, pp. 1305-1308, 2009

Online since:

September 2008

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$35.00

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