HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations

Abstract:

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Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1317-1320

DOI:

10.4028/www.scientific.net/MSF.600-603.1317

Citation:

T. Isshiki et al., "HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations", Materials Science Forum, Vols. 600-603, pp. 1317-1320, 2009

Online since:

September 2008

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$35.00

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