HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations

Toshiyuki Isshiki; Koji Nishio; Yoshihisa Abe; Jun Komiyama; Shunichi Suzuki; Hideo Nakanishi

doi:10.4028/www.scientific.net/MSF.600-603.1317

Paper Titles

Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds
p.1301

Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
p.1305

Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films
p.1309

Material Properties of GaN Films Grown on SiC/SOI Substrate
p.1313

HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations
p.1317

288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
p.1321

Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
p.1325

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
p.1329

Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
p.1333

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si...

HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations

Abstract:

Epitaxial growth of AlN was carried out by MOVPE method on SiC/Si buffered substrates prepared by using various Si surfaces of (110), (211) and (001). Cross-sectional HRTEM analyses of the interfaces between SiC buffer layer and AlN epitaxial layer disclosed characteristic nanostructures related growth mechanism on the each substrate. In the case of Si(110) and Si(211) substrate, hexagonal AlN grew directly on SiC(111) plane with AlN(0001) plane parallel to it. In contrast, growth on Si(001) substrate gave complicate structure at AlN/SiC interface. Hexagonal AlN didn’t grow directly but cubic AlN appeared with a pyramidal shape on SiC(001). When the cubic AlN grew 10nm in height, structure of growing AlN crystal changed to hexagonal type on the pyramidal {111} planes of cubic AlN.