Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Abstract:

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The current collapse of normally-off mode AlGaN/GaN/AlGaN double heterojunction field effect transistors was investigated in comparison with the normal AlGaN/GaN heterojunction filed effect transistors.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1329-1332

DOI:

10.4028/www.scientific.net/MSF.600-603.1329

Citation:

M. Shimizu et al., "Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors", Materials Science Forum, Vols. 600-603, pp. 1329-1332, 2009

Online since:

September 2008

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Price:

$35.00

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