Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Mitsuaki Shimizu; Masaki Inada; Shuichi Yagi; Akira Nakajima; Hajime Okumura; Akinori Ubukata; Yoshiki Yano; Nakao Akutsu

doi:10.4028/www.scientific.net/MSF.600-603.1329

Paper Titles

Material Properties of GaN Films Grown on SiC/SOI Substrate
p.1313

HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations
p.1317

288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
p.1321

Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
p.1325

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
p.1329

Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
p.1333

The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
p.1337

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
p.1341

Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs
p.1345

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Current Collapse in AlGaN/GaN/AlGaN Double...

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors

Abstract:

The current collapse of normally-off mode AlGaN/GaN/AlGaN double heterojunction field effect transistors was investigated in comparison with the normal AlGaN/GaN heterojunction filed effect transistors.

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Periodical:

Materials Science Forum (Volumes 600-603)

Pages:

1329-1332

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.600-603.1329

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Online since:

September 2008

Authors:

Mitsuaki Shimizu, Masaki Inada, Shuichi Yagi, Akira Nakajima, Hajime Okumura, Akinori Ubukata, Yoshiki Yano, Nakao Akutsu

Keywords:

AlGaN/GaN/AlGaN Double Heterojunction, Current Collapse, Field Effect Transistor

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