Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs

Akira Nakajima; Shuichi Yagi; Mitsuaki Shimizu; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.600-603.1345

Paper Titles

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
p.1329

Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
p.1333

The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
p.1337

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
p.1341

Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs
p.1345

DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
p.1349

Diamond Doped by Hot Ion Implantation
p.1353

Characterization of Nanometer-Sized ZnO by Raman and Cathodoluminescence Spectroscopies
p.1357

Annealing Behavior of Defects in Multiple-Energy Nitrogen Implanted ZnO Bulk Single Crystal
p.1361

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Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs

Abstract:

The effect of AlGaN surface traps on breakdown voltage VB and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs) were investigated using experimental measurement and numerical simulation. The drain current transient due to surface traps was systematically measured and analyzed, and the activation energy of a surface trap was evaluated as approximately 0.7 eV. Results from the device simulation of VB in HEMTs were in good agreement with the experimental results when assuming surface traps. The results indicate that surface traps increase VB, and induce a crucial current collapse.