DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator

Kazuyuki Hirama; Yoshikatsu Jingu; Masaru Ichikawa; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.4028/www.scientific.net/MSF.600-603.1349

Paper Titles

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
p.1329

Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
p.1333

The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
p.1337

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
p.1341

Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs
p.1345

DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
p.1349

Diamond Doped by Hot Ion Implantation
p.1353

Characterization of Nanometer-Sized ZnO by Raman and Cathodoluminescence Spectroscopies
p.1357

Annealing Behavior of Defects in Multiple-Energy Nitrogen Implanted ZnO Bulk Single Crystal
p.1361

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603DC and RF Performance of Diamond MISFETs with...

DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator

Abstract:

We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of -650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.