DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator

Abstract:

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We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of -650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1349-1351

DOI:

10.4028/www.scientific.net/MSF.600-603.1349

Citation:

K. Hirama et al., "DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator", Materials Science Forum, Vols. 600-603, pp. 1349-1351, 2009

Online since:

September 2008

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Price:

$35.00

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