Diamond Doped by Hot Ion Implantation

Abstract:

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Multiple P or S hot ion implantation to diamond substrates was performed at 800°C. Optical absorption spectra indicated that instantaneous annealing during hot ion implantation occurs. Temperature dependence of resistance demonstrated that a P as-implanted sample using a homoepitaxial diamond film substrate emerges a weak doping effect. Also on S implantation, a presence of a weak doping effect was observed in an as-implanted sample, but it was suggested that the dopant is not S itself but S and defect complex. However, post-implantation annealing resulted in high resistance of the samples and missing of such weak doping effects.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1353-1356

DOI:

10.4028/www.scientific.net/MSF.600-603.1353

Citation:

N. Tsubouchi et al., "Diamond Doped by Hot Ion Implantation", Materials Science Forum, Vols. 600-603, pp. 1353-1356, 2009

Online since:

September 2008

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Price:

$35.00

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