Diamond Doped by Hot Ion Implantation

Nobuteru Tsubouchi; M. Ogura; H. Watanabe; Akiyoshi Chayahara; Hideyo Okushi

doi:10.4028/www.scientific.net/MSF.600-603.1353

Paper Titles

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
p.1329

Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
p.1333

The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
p.1337

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
p.1341

Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs
p.1345

DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
p.1349

Diamond Doped by Hot Ion Implantation
p.1353

Characterization of Nanometer-Sized ZnO by Raman and Cathodoluminescence Spectroscopies
p.1357

Annealing Behavior of Defects in Multiple-Energy Nitrogen Implanted ZnO Bulk Single Crystal
p.1361

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Diamond Doped by Hot Ion Implantation

Diamond Doped by Hot Ion Implantation

Abstract:

Multiple P or S hot ion implantation to diamond substrates was performed at 800°C. Optical absorption spectra indicated that instantaneous annealing during hot ion implantation occurs. Temperature dependence of resistance demonstrated that a P as-implanted sample using a homoepitaxial diamond film substrate emerges a weak doping effect. Also on S implantation, a presence of a weak doping effect was observed in an as-implanted sample, but it was suggested that the dopant is not S itself but S and defect complex. However, post-implantation annealing resulted in high resistance of the samples and missing of such weak doping effects.