Diamond Doped by Hot Ion Implantation
Multiple P or S hot ion implantation to diamond substrates was performed at 800°C. Optical absorption spectra indicated that instantaneous annealing during hot ion implantation occurs. Temperature dependence of resistance demonstrated that a P as-implanted sample using a homoepitaxial diamond film substrate emerges a weak doping effect. Also on S implantation, a presence of a weak doping effect was observed in an as-implanted sample, but it was suggested that the dopant is not S itself but S and defect complex. However, post-implantation annealing resulted in high resistance of the samples and missing of such weak doping effects.
Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa
N. Tsubouchi et al., "Diamond Doped by Hot Ion Implantation", Materials Science Forum, Vols. 600-603, pp. 1353-1356, 2009