The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure

Young Hwan Choi; Ji Yong Lim; Kyu Heon Cho; In Hwan  Ji; Min Koo Han

doi:10.4028/www.scientific.net/MSF.600-603.1337

Paper Titles

288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
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Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
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Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
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Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
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The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
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Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
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Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs
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DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
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Diamond Doped by Hot Ion Implantation
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HomeMaterials Science ForumMaterials Science Forum Vols. 600-603The Effect of Ohmic Contact Location on the Buffer...

The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure

Abstract:

The effect of ohmic contact location on the buffer leakage current of AlGaN/GaN heterostructure was investigated and the AlGaN/GaN HEMT employing the proposed ohmic contact pattern was fabricated. We have fabricated 3 different types of ohmic patterns; type A - both contacts are on the etched GaN buffer layer, type B - one is on the etched GaN buffer layer and the other is on the unetched GaN cap layer and type C - both contacts are on the unetched GaN cap layer. Our experimental results showed that the ohmic contact on GaN buffer increased the buffer leakage current due to the lateral diffusion of ohmic metals. The proposed AlGaN/GaN HEMT successfully decreased the leakage current and did not affect the forward drain current and the transconductance.