Current Collapse Characteristic of AlGaN/GaN MIS-HEMT

Abstract:

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We investigated the current collapse characteristics of the fabricated MIS-HEMT with the SiO2, SiN and high-k gate insulator. TiO2 was employed as the high-k material. We found the significant drain current change in the switching characteristic when the insulator changes. The SiN MIS-HEMT showed good switching characteristic. On the other hand, the MIS-HEMTs with oxide insulator film showed large drain current reduction. We considered that the degradation of the switching characteristic is due to the current collapse.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1333-1336

DOI:

10.4028/www.scientific.net/MSF.600-603.1333

Citation:

S. Yagi et al., "Current Collapse Characteristic of AlGaN/GaN MIS-HEMT", Materials Science Forum, Vols. 600-603, pp. 1333-1336, 2009

Online since:

September 2008

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Price:

$35.00

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