Current Collapse Characteristic of AlGaN/GaN MIS-HEMT

Shuichi Yagi; Mitsuaki Shimizu; Yoshiki Yano; Akinori Ubukata; Nakao Akutsu

doi:10.4028/www.scientific.net/MSF.600-603.1333

Paper Titles

HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations
p.1317

288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
p.1321

Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
p.1325

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
p.1329

Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
p.1333

The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
p.1337

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
p.1341

Effect of Deep Trap on Breakdown Voltage in AlGaN/GaN HEMTs
p.1345

DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator
p.1349

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Current Collapse Characteristic of AlGaN/GaN MIS-HEMT

Abstract:

We investigated the current collapse characteristics of the fabricated MIS-HEMT with the SiO2, SiN and high-k gate insulator. TiO2 was employed as the high-k material. We found the significant drain current change in the switching characteristic when the insulator changes. The SiN MIS-HEMT showed good switching characteristic. On the other hand, the MIS-HEMTs with oxide insulator film showed large drain current reduction. We considered that the degradation of the switching characteristic is due to the current collapse.