Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance

Abstract:

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It is demonstrated that Si ion implantation is useful to fabricate GaN/AlGaN/GaN HEMTs with extremely low gate leakage current and low source resistance without any recess etching process. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into source/drain regions with energies of 30 and 80 keV, the performances were significantly improved. On-resistance reduced from 9.9 to 3.5 Ω·mm. Saturation drain current and maximum transconductance increased from 300 to 560 mA/mm and from 75 to 160 mS/mm, respectively.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1325-1328

DOI:

10.4028/www.scientific.net/MSF.600-603.1325

Citation:

K. Nomoto et al., "Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance", Materials Science Forum, Vols. 600-603, pp. 1325-1328, 2009

Online since:

September 2008

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$35.00

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