Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance

Kazuki Nomoto; Masataka Satoh; Tohru Nakamura

doi:10.4028/www.scientific.net/MSF.600-603.1325

Paper Titles

Correlation between Screw Dislocations Distribution and Cathodoluminescence Spectra of InGaN Single Quantum Well Films
p.1309

Material Properties of GaN Films Grown on SiC/SOI Substrate
p.1313

HRTEM Analysis of AlN Layer Grown on 3C-SiC/Si Heteroepitaxial Substrates with Various Surface Orientations
p.1317

288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs
p.1321

Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance
p.1325

Current Collapse in AlGaN/GaN/AlGaN Double Heterojunction Field Effect Transistors
p.1329

Current Collapse Characteristic of AlGaN/GaN MIS-HEMT
p.1333

The Effect of Ohmic Contact Location on the Buffer Leakage Current of AlGaN/GaN Heterostructure
p.1337

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier
p.1341

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with...

Multiple Ion-Implanted GaN/AlGaN/GaN HEMTs with Remarkably Low Parasitic Source Resistance

Abstract:

It is demonstrated that Si ion implantation is useful to fabricate GaN/AlGaN/GaN HEMTs with extremely low gate leakage current and low source resistance without any recess etching process. The source/drain regions were formed using Si ion implantation into undoped GaN/AlGaN/GaN on sapphire substrate. Using ion implantation into source/drain regions with energies of 30 and 80 keV, the performances were significantly improved. On-resistance reduced from 9.9 to 3.5 Ω·mm. Saturation drain current and maximum transconductance increased from 300 to 560 mA/mm and from 75 to 160 mS/mm, respectively.