Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO2/Si Substrate

Gwiy Sang Chung; Tae Won Lee

doi:10.4028/www.scientific.net/MSF.600-603.1289

Paper Titles

Epitaxial Lateral Overgrowth of (1-100) m-Plane GaN on m-Plane 6H-SiC by Metalorganic Chemical Vapor Deposition
p.1273

Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates
p.1277

Semipolar Nitrides Grown on Si(001) Offcut Substrates with 3C-SiC Buffer Layers
p.1281

Surface Morphology of AlN Epitaxial Layer Grown on Various SiC Substrates by Sublimation Closed Space Technique
p.1285

Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO₂/Si Substrate
p.1289

Raman Scattering Analysis of Electrical Property and Crystallinity in Freestanding GaN Crystals with Various Impurity Concentrations
p.1293

Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy
p.1297

Optical Characterization of Defect-Related Carrier Recombination and Transport Features in GaN Substrates and CVD Diamonds
p.1301

Characterization of V-Defects in InGaN Single-Quantum-Well Films at Nanometer Level by High Spatial Resolution Cathodoluminescence Spectroscopy
p.1305

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Effects of 3C-SiC Intermediate Layer on the...

Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO₂/Si Substrate

Abstract:

Aluminum nitride thin films were deposited on polycrystalline 3C-SiC intermediate layer by pulsed reactive magnetron sputtering system. Characteristics of AlN/SiC structures were investigated experimentally by means of FE-SEM, AFM, X-ray diffraction, and FT-IR. The columnar structure of AlN thin films was observed by FE-SEM. The surface roughness of AlN films on 3C-SiC layer was measured using AFM. X-ray diffraction pattern of AlN films on SiC layers highly were oriented as (002). Full width of half maximum (FWHM) of the rocking curve around (002) reflections was 1.3°. It was determined from infrared absorbance spectrum that the residual stress of AlN thin films grown on SiC layers was almost free. The presented results show that AlN thin films on 3C-SiC buffer layers can be used for various applications.