Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO2/Si Substrate

Abstract:

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Aluminum nitride thin films were deposited on polycrystalline 3C-SiC intermediate layer by pulsed reactive magnetron sputtering system. Characteristics of AlN/SiC structures were investigated experimentally by means of FE-SEM, AFM, X-ray diffraction, and FT-IR. The columnar structure of AlN thin films was observed by FE-SEM. The surface roughness of AlN films on 3C-SiC layer was measured using AFM. X-ray diffraction pattern of AlN films on SiC layers highly were oriented as (002). Full width of half maximum (FWHM) of the rocking curve around (002) reflections was 1.3°. It was determined from infrared absorbance spectrum that the residual stress of AlN thin films grown on SiC layers was almost free. The presented results show that AlN thin films on 3C-SiC buffer layers can be used for various applications.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1289-1292

DOI:

10.4028/www.scientific.net/MSF.600-603.1289

Citation:

G. S. Chung and T. W. Lee, "Effects of 3C-SiC Intermediate Layer on the Properties of AlN Films Grown on SiO2/Si Substrate", Materials Science Forum, Vols. 600-603, pp. 1289-1292, 2009

Online since:

September 2008

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$35.00

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