Efficiency Improvement of PV-Inverters with SiC-DMOSFETs

Abstract:

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The new MOSFET-generation with SiC-materials seems well suited for power electronic converters up to 1200 V operating-voltage, and particularly for grid-feeding PhotoVoltaic-inverters, which transfer the DC power of the solar panel to the AC grid. Their high switching speed and low on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V / 10 A SiC-DMOSFET samples made by CREE®.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1231-1234

DOI:

10.4028/www.scientific.net/MSF.600-603.1231

Citation:

B. Burger et al., "Efficiency Improvement of PV-Inverters with SiC-DMOSFETs", Materials Science Forum, Vols. 600-603, pp. 1231-1234, 2009

Online since:

September 2008

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Price:

$35.00

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