Efficiency Improvement of PV-Inverters with SiC-DMOSFETs

Bruno Burger; Dirk Kranzer; Olivier Stalter

doi:10.4028/www.scientific.net/MSF.600-603.1231

Paper Titles

Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
p.1215

The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity
p.1219

High Power-Density SiC Converter
p.1223

3D Thermal Stress Model for SiC Power Modules
p.1227

Efficiency Improvement of PV-Inverters with SiC-DMOSFETs
p.1231

A High Performance CCM PFC Circuit Using a SiC Schottky Diode and a Si SuperFET^TM Switch
p.1235

Summary of SiC Research for Transportation Applications at ORNL
p.1239

LPE Growth of Bulk GaN Crystal by Alkali-Metal Flux Method
p.1245

600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
p.1251

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Efficiency Improvement of PV-Inverters with...

Efficiency Improvement of PV-Inverters with SiC-DMOSFETs

Abstract:

The new MOSFET-generation with SiC-materials seems well suited for power electronic converters up to 1200 V operating-voltage, and particularly for grid-feeding PhotoVoltaic-inverters, which transfer the DC power of the solar panel to the AC grid. Their high switching speed and low on-resistance RDS(on) allow the use of higher switching frequencies, which could mainly reduce the costs and weight of the converters. This paper shows a comparison between IGBT and SiC DMOSFET devices and first measurements of some 1200 V / 10 A SiC-DMOSFET samples made by CREE®.