4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Jun  Hu; Xiao Bin Xin; Peter Alexandrov; Jian Hui Zhao; Brenda L. VanMil; D. Kurt Gaskill; Kok Keong Lew; Rachael L. Myers-Ward; Charles R. Eddy

doi:10.4028/www.scientific.net/MSF.600-603.1203

Paper Titles

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
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Design, Simulation, and Characterization of High-Voltage SiC p-IGBTs
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SiC Based Optically-Gated High-Power Solid-State Switch for Pulsed-Power Application
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Hydrogen Gas Sensors Fabricated on Atomically Flat 4H-SiC Webbed Cantilevers
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4H-SiC Single Photon Avalanche Diode for 280nm UV Applications
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Avalanche Multiplication and Impact Ionisation in Separate Absorption and Multiplication 4H-SiC Avalanche Photodiodes
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Observation of Luminescence from Defects in 4H-SiC APDs Operating in Avalanche Breakdown
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Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
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The Influence of Radiation Defects on the Charge Transport in SiC Nuclear Detectors in Conditions of Elevated Temperatures and Deep Compensation of the Conductivity
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4H-SiC Single Photon Avalanche Diode for 280nm UV Applications

Abstract:

This paper reports a 4H-SiC single photo avalanche diode (SPAD) operating at the solar blind wavelength of 280 nm. The SPAD has an avalanche breakdown voltage of 114V. At 90% and 95% of the breakdown voltage, the SPAD shows a low dark current of 57.2fA and 159fA, respectively. The quantum efficiency of 29.8% at 280nm and <0.007% at 400nm indicates a high UV-to-visible rejection ratio of >4300. Single photon counting measurement at 280nm shows that a single photon detection efficiency of 2.83% with a low dark count rate of 22kHz is achieved at the avalanche breakdown voltage of 116.8V.