A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors

K.G.P. Eriksson; Martin Domeij; Hyung Seok Lee; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.600-603.1171

Paper Titles

1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70
p.1155

4H-SiC Bipolar Junction Transistors with a Current Gain of 108
p.1159

Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs
p.1163

Reliability Testing of 4H-SiC Bipolar Junction Transistors in Continuous Switching Applications
p.1167

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
p.1171

Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
p.1175

Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters
p.1179

A 13 kV 4H-SiC n-Channel IGBT with Low R_diff,onand Fast Switching
p.1183

12 kV 4H-SiC p-IGBTs with Record Low Specific On-Resistance
p.1187

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603A Simple and Reliable Electrical Method for...

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors

Abstract:

To determine the maximum allowed power dissipation in a power transistor, it is important to determine the relationship between junction temperature and power dissipation. This work presents a new method for measuring the junction temperature in a SiC bipolar junction transistor (BJT) that is self-heated during DC forward conduction. The method also enables extraction of the thermal resistance between junction and ambient by measurements of the junction temperature as function of DC power dissipation. The basic principle of the method is to determine the temperature dependent I-V characteristics of the transistor under pulsed conditions with negligible self-heating, and compare these results with DC measurements with self-heating. Consistent results were obtained from two independent temperature measurements using the temperature dependence of the current gain, and the temperature dependence of the base-emitter I-V characteristics, respectively.