4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Q. Jon Zhang; Charlotte  Jonas; Albert A. Burk; Craig Capell; Jonathan Young; Robert  Callanan; Anant K. Agarwal; John W. Palmour; Bruce  Geil; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.600-603.1159

Paper Titles

On-State and Switching Performance of High-Voltage 15 – 20 kV 4H-SiC DMOSFETs and IGBTs
p.1143

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices
p.1147

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance
p.1151

1600 V, 5.1 mΩ●cm² 4H-SiC BJT with a High Current Gain of β=70
p.1155

4H-SiC Bipolar Junction Transistors with a Current Gain of 108
p.1159

Simulation and Modeling of Thermal Effects in 4H-SiC NPN BJTs
p.1163

Reliability Testing of 4H-SiC Bipolar Junction Transistors in Continuous Switching Applications
p.1167

A Simple and Reliable Electrical Method for Measuring the Junction Temperature and Thermal Resistance of 4H-SiC Power Bipolar Junction Transistors
p.1171

Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT
p.1175

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4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Abstract:

4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a base as thin as 0.25 μm. The current gain decreases at high temperatures but is still greater than 40 at 300°C. The device demonstrates an open emitter breakdown voltage (BVCBO) of 1150 V, and an open base breakdown voltage (BVCEO) of 250 V. A low specific on-resistance of 3.6 mW-cm2 at 25°C was achieved. The BJTs have shown blocking capabilities over a wide range of operating temperatures up to 300°C.