4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Abstract:

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4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a base as thin as 0.25 μm. The current gain decreases at high temperatures but is still greater than 40 at 300°C. The device demonstrates an open emitter breakdown voltage (BVCBO) of 1150 V, and an open base breakdown voltage (BVCEO) of 250 V. A low specific on-resistance of 3.6 mW-cm2 at 25°C was achieved. The BJTs have shown blocking capabilities over a wide range of operating temperatures up to 300°C.

Info:

Periodical:

Materials Science Forum (Volumes 600-603)

Edited by:

Akira Suzuki, Hajime Okumura, Tsunenobu Kimoto, Takashi Fuyuki, Kenji Fukuda and Shin-ichi Nishizawa

Pages:

1159-1162

DOI:

10.4028/www.scientific.net/MSF.600-603.1159

Citation:

Q. J. Zhang et al., "4H-SiC Bipolar Junction Transistors with a Current Gain of 108 ", Materials Science Forum, Vols. 600-603, pp. 1159-1162, 2009

Online since:

September 2008

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Price:

$35.00

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