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From the Joint Committee on Powder Diffraction Standards (JCPDS) database, individual crystalline phases were identified.
From the PDF card of Mg, we can see that hexagonal Mg (101) plane is the strongest diffraction peak, while the strongest peak is (002) plane in all prepared films, so the (002) plane is in strongly preferred orientation and the film growth is oriented perpendicular to the substrate surface.
When temperature is lower, free energy of critical nucleation declines, number of nuclei formed increases, which helps to form continuous organization of films with small grains; when temperature is higher, larger critical size and higher free energy of nuclei formed are needed, which helps to form bulky island organization of films.

It is also observed that the glassy region is smaller and the number of crystallites is greater than that of the sample shown in Fig. 1.
[8] Powder Diffraction File, Card No. 21-1276, JCPDS, 1992, Swathmore, PA, USA

XRD patterns of the substrate is shown in Fig. 2b which can be indexed to cubic YSZ and rhombohedral LSM, JCPDS cards 01-078-3349 and 53-0058, respectively.
XRD stack patterns of YSZ films on LSM/YSZ substrate at (a) 1200 °C, (b) 1300 °C, and (c) 1350 °C sintering temperature d=line length ave. number of grain boundary intersections 1 Surface SEM images of the YSZ deposits and its corresponding cross-sectional images at different sintering temperatures are shown in Fig. 4.

This phenomenon can be explained by the fact that the number of the sputtered ZnO molecules at the target surface increases due to the enhancement of bombardment by argon ions as the RF power increased [15].
Regardless of the RF power applied, all film shows a peak at 2q∼34.4° that correspond to the (002) hexagonal wurtzite structure of ZnO with JCPDS Card no. 36-1451.

All peaks can be well-indexed to the characteristic XRD peaks of the single phase of Bi2MoO6 according to the JCPDS card number 76-2388.

The main phase of all samples is identified as LiFePO4 with an ordered olivine structure indexed to orthorhombic Pnmb (JCPDS card number: 40-1499).

The JCPDS card of SiO2 is 62-1574, indexed as (1, 0, 0) plane.
Acknowledgements The researchers would like to thank to Universiti Kebangsaan Malaysia (UKM) for funding this project under research grant number UKM-ST-07-FRGS-0002-2008 References [1] S.C.

a: NH4FePO4·H2O b: LiFePO4/C c: LiFePO4 Fig.1 SEM images of the samples Fig.2 XRD pattern of the sample LiFePO4/C Fig.3 FTIR spectra of the sample LiFePO4/C Figure 2 was XRD patterns of sample A, scan range 15o-45o, obviously diffraction peaks of the sample was sharp .Contrast JCPDS standard card showed that the material had a single olivine structure, crystal integrity.Because of less doped, no obvious pattern of impurities in the samples,Sample of the cell parameters for a = 1.0329nm, b = 0.6005nm, c = 0.4696nm, cell volume V = 0.2913nm, which were in good agreement with in reference [1] reported values.
Electrochemical properties Figure 4 showed the experimental samples A and B at room temperature to 0.2C charge and discharge rate performance curve for the first time.It can be seen, both LiFePO4 material had better charge and discharge platform, charging platform was about 3.5V, discharge plateau was about 3.4V , the initial discharge capacity of pure LiFePO4 were 116.2mAh/g, 108.2mAh/g, LiFePO4/C ratio of the first charge and discharge capacity were 151.9mAh/g, 144.6mAh/g, the first charge-discharge efficiency were 93.1%, 95.2%.Sample A under different rate discharge capacity with cycle number of changes shown in Figure 5.Given: 0.2C discharge at 20 cycles, the discharge capacity of 134.7mAh/g, decreased 9.5mAh/g; 10C discharge rate, the loop 20 times, the discharge capacity decreased by about 12mAh/g, a 8.76% capacity fade.

The composition of the complex was detected on a BIO-RAD FTS135 Fourier-transform infrared (FTIR) spectrometer using the KBr pellet technique with a wave number range of 4000-400 cm-1.
The XRD pattern of the first ligand H2L origins from JCPDS card No. 75-0033.

SEM patterns of the ZnS thin films produced by various radio frequency power The SEM surface images of the ZnS films with sputtering pressure 0.6Pa produced at different powers are shown in Fig.1.For the ZnS film with the power of 100W, the surface morphology consists of a large number of crystallites with visible pores, as shown in Fig. 1a.
The XRD patterns of ZnS films deposited at 0.6Pa are shown in Fig.2 with various radio frequency power of 100W,200W,300W,and 400W,respectively.All the films exhibit the dominant peak centered at 2θ=28.027º,according to the JCPDS cards,which corresponds to the diffraction from the (111) plane of the β-ZnS with the crystal spacing 0.318 nm.From the intensities of ZnS (111) peak,it can be found that the ZnS thin film has a (111) preferred orientation.The relative intensity of the ZnS (111) diffraction peak increased gradually as the power was increased up to 300W,showing that the growth of crystallization is very well.It can be clearly seen that the FWHM valuedecreases markedly from 0.616° to 0.576° with increasing the power from 100W to 300W.This means that the crystallinity of ZnS films becomes better by increasing the radio frequency power.Up to 400W,however,the FWHM value of the peak increases to 0.188°, indicating the deterioration of crystallinity of the films,which means higher power