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Online since: August 2011
Authors: Youssef Zaatar, Chadi Nader, R. Abi Saad, Zeina Melhem, Doumit Zaouk
Box 90656 Jdeidet El Metn, Lebanon
(2) LT2C Laboratory, TSE, University Jean Monnet, 25, rue du Dr Rémy ANNIN 42000 SAINT-ETIENNE, France
ar_awad_7@hotmail.com, bzeinamelhem1@hotmail.com, ccnader@ul.edu.lb, dyzaatar@ul.edu.lb, edoumitzaouk@ul.edu.lb
Keywords: Microstrip patch antenna, Printed antennas, Wireless communications, Dual-band, RFID antennas, Multi-band antennas.
Tiwari and al. have obtained the same result in a previous work [10].
Tiwari and al. have obtained the same result in a previous work [10].
Online since: January 2022
Authors: Hala Al-Jawhari, Asmaa Mudhaffar
Young Jun Tak et al. had used a simultaneous DUV and thermal treatment to anneal their sputtered indium-gallium-zinc oxide channel layers [19] and hafnium oxide gate dielectric films [20].
The bandgaps of our samples are larger than (3.00 eV) which was reported by Goldenberg et al.[9], but within the same range of the value (3.9 eV) reported by Frye et al.[23] for their annealed samples.
This breakdown value is slightly less than 0.85 MV/cm obtained by Radhakrishnan et al. [12] for STO films annealed at 500oC.
Oluwabi et.al. [16] reported that DUV activation enhances the quality of their ZrO films by increasing the number of M–O bonds and decreasing the number of oxygen vacancies.
El-Sayed Shalaan (Physics Department, KAU) for his help with the ellipsometry measurements.
The bandgaps of our samples are larger than (3.00 eV) which was reported by Goldenberg et al.[9], but within the same range of the value (3.9 eV) reported by Frye et al.[23] for their annealed samples.
This breakdown value is slightly less than 0.85 MV/cm obtained by Radhakrishnan et al. [12] for STO films annealed at 500oC.
Oluwabi et.al. [16] reported that DUV activation enhances the quality of their ZrO films by increasing the number of M–O bonds and decreasing the number of oxygen vacancies.
El-Sayed Shalaan (Physics Department, KAU) for his help with the ellipsometry measurements.
Online since: October 2010
Authors: Mohammad Reza Shabgard, Keivan Amini, Babak Sadizadeh, Hamid Pourziaie
Puertas et al. presented mathematical models for electric discharge machining of WC-Co, SiC and conductive ceramics on the basis of experiment designing techniques.
Khoshkish et al. studied the effects of electrode tool materials and machining input parameters (such as: current, pulse-on time) on AISI D3 EDM characteristic, by analysis of variance and experiments designing techniques.
[9] Hewidy, M.S., El-Taweel, T.A., El-Safty, M.F., 2005, Modelling the machining parameters of wire electrical discharge machining of Inconel 601 using RSM, J.
Khoshkish et al. studied the effects of electrode tool materials and machining input parameters (such as: current, pulse-on time) on AISI D3 EDM characteristic, by analysis of variance and experiments designing techniques.
[9] Hewidy, M.S., El-Taweel, T.A., El-Safty, M.F., 2005, Modelling the machining parameters of wire electrical discharge machining of Inconel 601 using RSM, J.
Online since: June 2014
Authors: K. Vijaya Kumar, V. Durga Praveena
Gaffet, E, Tachikart, M, El Kedim, O, Rahouadj, R: Nanostructural materials formation by mechanical alloying: morphologic analysis based on transmission and scanning electron microscopic observations.
[5].Wang B, Chen K, Jiang S, et al.
[6].Yi H, Wu LQ, Bentley WE, et al.
El-Sayed, 2003.
[5].Wang B, Chen K, Jiang S, et al.
[6].Yi H, Wu LQ, Bentley WE, et al.
El-Sayed, 2003.
Online since: February 2014
Authors: Iis Nurhasanah, Heri Sutanto, Priyono Priyono, Istadi Istadi
This procedure is as done by Sardar et al [15].
El-Masry, Magnetic Properties of Mn-doped GaN and p-i-n Junctions, Phy.
El-Masry, Room Temperature Magnetic Ga,Mn N: A New Material for Spin Electronic Devices, Mat.
Sardar et al, Epitaxial GaN films deposited on sapphire substrates prepared by the sol–gel method, Solid State Communications 125 (2003) 355–358
El-Masry, Magnetic Properties of Mn-doped GaN and p-i-n Junctions, Phy.
El-Masry, Room Temperature Magnetic Ga,Mn N: A New Material for Spin Electronic Devices, Mat.
Sardar et al, Epitaxial GaN films deposited on sapphire substrates prepared by the sol–gel method, Solid State Communications 125 (2003) 355–358
Online since: January 2016
Authors: Septian Khairul Masdi, Arief Surachman, Nasruddin Nasruddin
Jalilinasrabady et al. [4]conducted a energy and exergy analysis of the Sabalan geothermal power plant and suggest a double flash cycle system for that power plant.
El-Emam et al. [5] produced an exergy and exergoeconomic analyses and optimization of geothermal organic Rankine cycle.
[5] El-Emam,.
El-Emam et al. [5] produced an exergy and exergoeconomic analyses and optimization of geothermal organic Rankine cycle.
[5] El-Emam,.