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Online since: September 2017
Authors: Nataliya Shaburova, T.D. Ratmanov, A.M. Minkin
"D8 Advance Eco" Bruker (US) X-ray diffractometer with the survey geometry by Bragg-Brentano, which provides for strictly parallel reflecting planes and substrate surfaces at all Bragg angles θ, has been used to determine the plane stress state of molybdenum coating.
Process Engineering of Dimensional Fused Silica Etching, Materials Science Forum. 870 (2016) 20-25
Shen, Effect of deposition conditions on mechanical stresses and microstructure of sputter-deposited molybdenum and reactively sputter-deposited molybdenum nitride films, Materials Science and Engineering.
Process Engineering of Dimensional Fused Silica Etching, Materials Science Forum. 870 (2016) 20-25
Shen, Effect of deposition conditions on mechanical stresses and microstructure of sputter-deposited molybdenum and reactively sputter-deposited molybdenum nitride films, Materials Science and Engineering.
Online since: November 2006
Authors: José Carlos Santos, Marco Antonio Colosio, Lucio Salgado, Edilson Rosa Barbarosa Jesus, E.S. Jesus Filho, S.L. Jesus, S. Yoshida, C.H. Sartori, J.L. Rossi
Lineu Prestes, 2242 - Cidade Universitária, 05508-000, São Paulo SP, Brazil
2
Escola Superior de Agricultura Luiz de Queiroz - ESALQ
3
General Motors do Brasil - Materials and Fastening Engineering Department
4
Brasimet Comércio e Indústria - Application Engineering Department
esjfilho@usp.br
Keywords: valve seat insert, high-speed-steel AISI M3/2, powder metallurgy, heat treatment.
The microstructural analyses for EDS in the heat-treated alloy 1 (Fig. 7, points a, b and c), characterise better the phenomenon, showing the evolution of the diffusion mechanism that starts of the darkest area (point b) containing larger amounts of Fe, and it advances to point c (high-speed steel islands).
Materials Science Forum, Zurich, v. 498-99, p. 79-84, 2005
The microstructural analyses for EDS in the heat-treated alloy 1 (Fig. 7, points a, b and c), characterise better the phenomenon, showing the evolution of the diffusion mechanism that starts of the darkest area (point b) containing larger amounts of Fe, and it advances to point c (high-speed steel islands).
Materials Science Forum, Zurich, v. 498-99, p. 79-84, 2005
Online since: April 2010
Authors: Marco Naretto, Luciano Scaltrito, Denis Perrone, Sergio Ferrero
Scaltrito
2, d
1
Politecnico di Torino, Physics Department, C.so Duca degli Abruzzi 24,Torino IT-10129,Italy
2
Politecnico di Torino, Materials Science and Chemical Engineering Department,
C.so Duca degli Abruzzi 24,Torino IT-10129,Italy
a
marco.naretto@polito.it, bdenis.perrone@polito.it, csergio.ferrero@polito.it,
d
luciano.scaltrito@polito.it
Keywords: Schottky diode, electrical characterization, non-uniform barrier
Abstract.
Pensl, Silicon Carbide: Recent Major Advances, eds.
Ferrero et al., Microelectronic Engineering Vol. 83 (2006), pp. 86-88 [7] D.
Forum Vols.615-617 (2009), pp. 647-650 [8] A.
Pensl, Silicon Carbide: Recent Major Advances, eds.
Ferrero et al., Microelectronic Engineering Vol. 83 (2006), pp. 86-88 [7] D.
Forum Vols.615-617 (2009), pp. 647-650 [8] A.
Online since: June 2015
Authors: M.R. Jennings, S.M. Thomas, Yogesh K. Sharma, Fan Li, Dean Hamilton, C.A. Fisher, P.A. Mawby, A. Pérez-Tomás
Mawby1)
1) School of Engineering, University of Warwick, Coventry, United Kingdom
2) ICN2 - Institut Catala de Nanociencia i Nanotecnologia, E-08193 Bellaterra, Barcelona, CAT, Spain
y.k.sharma@warwick.ac.uk
Keywords: 3C-SiC, High-temperature oxidation, C-V, G-V, interface traps, N2O annealing
Abstract: A systematic study on the 3C-SiC/SiO2 interface has been done. 3C-SiC epilayers have been grown on a Si (001) substrate.
Acknowledgements: This project, Vehicle Electrical Systems Integration (VESI), was funded by the Engineering and Physical Sciences Research Council (ESPRC), (Grant # RESEE-3065).
Agarwal, Advances in Silicon Carbide Processing and Applications (Artech House 2004)
Forums 778, 599 (2014)
Acknowledgements: This project, Vehicle Electrical Systems Integration (VESI), was funded by the Engineering and Physical Sciences Research Council (ESPRC), (Grant # RESEE-3065).
Agarwal, Advances in Silicon Carbide Processing and Applications (Artech House 2004)
Forums 778, 599 (2014)
Online since: February 2014
Authors: Vladimir Luzin, D.G. Hattingh, Andrew M. Venter
Nishikawa, Engineering Failure Analysis 15 (2008) 1155
Wakita, Transactions of Japan Society of Spring Engineers 2003 (2003) 7
Forum 652 (2010) 86
Lowe-Ma, Materials Science and Engineering: A 367 (issues 1–2) (2004) 306
Cervantes-Hernández, Engineering Failure Analysis 13 (2006) 1303.
Wakita, Transactions of Japan Society of Spring Engineers 2003 (2003) 7
Forum 652 (2010) 86
Lowe-Ma, Materials Science and Engineering: A 367 (issues 1–2) (2004) 306
Cervantes-Hernández, Engineering Failure Analysis 13 (2006) 1303.
Online since: April 2009
Authors: Graeme E. Murch, Alexander V. Evteev, Elena V. Levchenko, Irina V. Belova
Murch
1,d
1
The University Centre for Mass and Thermal Transport in Engineering Materials,
School of Engineering, The University of Newcastle, Callaghan, NSW 2308, Australia
a
Alexander.Evteev@newcastle.edu.au, bElena.Levchenko@newcastle.edu.au,
cIrina.Belova@newcastle.edu.au, dGraeme.Murch@newcastle.edu.au
Keywords: Diffusion, stability, vacancies, Monte Carlo simulation, binary alloy, hollow nanospheres.
Introduction Hollow nanoparticles represent an important class of novel materials and attract special interest due to their broad range of advanced scale-dependent applications, for example, in photonic devices, drug delivery vehicles, nano-chemical reactors, robust carriers/catalysts, active material encapsulation, ionic intercalation, key components of ultra-lightweight structural materials, size-selective reactions [1-5].
Forum Vol. 277 (2008), p. 21
Forum Vol. 266 (2007), p. 39.
Introduction Hollow nanoparticles represent an important class of novel materials and attract special interest due to their broad range of advanced scale-dependent applications, for example, in photonic devices, drug delivery vehicles, nano-chemical reactors, robust carriers/catalysts, active material encapsulation, ionic intercalation, key components of ultra-lightweight structural materials, size-selective reactions [1-5].
Forum Vol. 277 (2008), p. 21
Forum Vol. 266 (2007), p. 39.
Online since: February 2019
Authors: S.V. Vasyunina, V.O. Momot, M.S. Kondratyev
Kondratyev1,c
1 Bryansk State Engineering Technological University, 3 Stanke Dimitrova str., Bryansk, Russia
alady-vasunina@yandex.ru, btheshadyboom@yandex.ru, с5986128@gmail.сom
Keywords: building ceramics, organic-mineral additive, wollastonite, superplasticizer S-3, physical and mechanical properties.
Lukutsova, Sand-clay raw materials for silicate materials production, Advances in Environmental Biology. 8 (10) (2014) 949-955
Vasyunina, Influence of additives on the properties of building ceramics, International innovation forum: Construction-2016. (2016) 48-52
Series: Materials Science and Engineering. 262(1) (2017) 012025
Lukutsova, Sand-clay raw materials for silicate materials production, Advances in Environmental Biology. 8 (10) (2014) 949-955
Vasyunina, Influence of additives on the properties of building ceramics, International innovation forum: Construction-2016. (2016) 48-52
Series: Materials Science and Engineering. 262(1) (2017) 012025
Online since: October 2010
Authors: Peng Jia, Ming Zhou
Jia2, b
1, 2School of Mechanical and Electrical Engineering, Harbin Institute of Technology, Harbin 150001, P.R. of China
a, bhunter@hit.edu.cn
Keywords: Diamond cutting, tool wear, glass, orthogonal experiment
Abstract.
However, diamond cutting of glass has not yet proven practical because of high tool wear rate and low production efficiency, although some advances in precision cutting of glass have been made as reported in the literatures.
Mangamelli: Precision Engineering Vol. 18(1) (1996), p. 4 [2] C.
Li: Materials Science Forum Vol. 626-627 (2009), p. 50 [4] M.
However, diamond cutting of glass has not yet proven practical because of high tool wear rate and low production efficiency, although some advances in precision cutting of glass have been made as reported in the literatures.
Mangamelli: Precision Engineering Vol. 18(1) (1996), p. 4 [2] C.
Li: Materials Science Forum Vol. 626-627 (2009), p. 50 [4] M.
Online since: February 2014
Authors: Gil Yong Chung, Edward Sanchez, Jie Zhang, Sha Yan Byrapa, Yu Yang, Balaji Raghothamachar, Bernd Thomas, Fang Zhen Wu, Huan Huan Wang, Mark J. Loboda, Darren M. Hansen, Stephan G. Mueller, Michael Dudley
Loboda2
1Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11790
2Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686
amichael.dudley@stonybrook.edu
Keywords: wide band gap semiconductor, epitaxial growth, stacking fault, threading dislocation
Abstract.
However, for the finite density of defects that currently remains in the substrate, a key issue is understanding how they propagate into the epilayer since this can present an opportunity to engineer the defect configuration in the epilayer.
Subsequently, when growth is initiated, vicinal steps advance over these exposed step configurations leading to the creation of V-shaped or Y-shape, c/4 stacking faults bounded by c/4 and 3c/4 Frank partial dislocations as shown in Fig. 6(c) for V-shape fault and (f) for Y-shape fault.
Materials Science Forum, 679-680 (2011) 269-272 [6] M.
However, for the finite density of defects that currently remains in the substrate, a key issue is understanding how they propagate into the epilayer since this can present an opportunity to engineer the defect configuration in the epilayer.
Subsequently, when growth is initiated, vicinal steps advance over these exposed step configurations leading to the creation of V-shaped or Y-shape, c/4 stacking faults bounded by c/4 and 3c/4 Frank partial dislocations as shown in Fig. 6(c) for V-shape fault and (f) for Y-shape fault.
Materials Science Forum, 679-680 (2011) 269-272 [6] M.