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Fig. 24 illustrates the structure of an EL device composed of a glass substrate, ZnO:Al transparent columnar electrodes, a Si3N4 insulating layer, a ZnS:Mn nanocrystal emission layer, and Al columnar electrodes [137].
Recently Sakshi et al. [153] have fabricated ZnS:Cu/PVA nanocomposite EL devices for flat panel displays.
Nogriya et al. [154] have studied the EL and PL of CdS nanocrystals prepared by orgenometallic precursor.
Chouksey et al. [156] have investigated the EL of CdS nanoparticles-polyvinyl carbazole composites.
Fig. 32: Spectra of mechano-luminescence (ML), Photo-luminescence (PL), and electro-luminescence (EL) for ZnS:Mn nanoparticles (after Xu et al.

(13) The elastic strain energy density arising from the lattice misfit between the γ and γ' phases is estimated based on the micromechanics [11,12]: ),(),( 2 1 el el str ttCE kl ijijkl rr εε=
(14) The elastic strain, ε el kl, is expressed as: ),(),(),( 0 el ttt kl kl kl rrr εεε −= , (15) where εkl and ε 0kl represent the total strain and eigenstrain, respectively.
Hooke's law gives the local elastic stress as σ el ij(r)=Cijklε el kl(r), and the local elastic constants Cijkl is assumed to be Cijkl={1-h(φi)}Cm ijkl+h(φi)Cpijkl, where Cm ijkl and Cp ijkl represent the elastic constants of the γ matrix and the γ' precipitate, respectively.
The equilibrium elastic field is determined by solving the local mechanical equilibrium equation, i.e., ∂σ el ij/∂ rj = 0.
Zhou et al.: Acta Mater.

Lower Rpv obtained by thermal annealing under magnetic field resulted in enhancing the stability of the ITO/m-MTDATA/Al device.
ITO/m-MTDATA/Al layers.
The typical current-voltage characteristics of the ITO/ m-MTDATA/Al device is shown in Fig. 3.
El-Nahass, Z.
El-Gohary and H.

In the El-Mellouhi et al. work [16] it is shown that the prevalence of a charge state of gallium vacancies is determined by the temperature and the position of the Fermi level (Fig. 2).
To our mind, the most typical are the following Al and Si diffusion coefficients in GaAs (Fig. 3): - Bracht et al. [19], where Ea = 3,5 eV, D0 = 0,17 cm2/s; - Wee et al. [20], where Ea = 3,6 eV, D0 = 0,2 cm2/s; - Tan et al. [14], where Ea = 4,98 eV, D0 = 5,2·105 cm2/s, and [15], where Ea = 3,91 eV, D0 = 6,77·104 cm2/s (Si out-diffusion case).
Temperature dependence of Al and Si diffusion coefficient in intrinsic GaAs.
El.
El-Mellouhi and N.

The lattice parameters of the BaFe11M1O19 (M= Al, Ti and Mn) samples
DSC curves of the BaFe11M1O19 (M= Al, Ti and Mn) samples.
Zdorovets, A.L.
El Shater, E.H.
El-Ghazzawy, M.K.

AlSi-SiC Composites for Automotive Brake Rotor Fatma Firouz a*, Atef Daoudb, Malak Abou El-Khairc Composite Materials Laboratory, Central Metallurgical Research and Development Institute (CMRDI), P.O.
Table 1 Chemical composition of Al-9Si and Al-12Si Alloy Si Mg Cu Zn Fe Mn Al Al-9Si 8.79 0.393 0.314 0.0124 0.113 0.0333 Rest Al-12Si 12.36 1.190 1.480 0.0407 0.694 0.0184 Rest 2.3 Manufacturing of Brake Rotors made of AlSi-SiC Composites Schematic diagram of the stir casting apparatus used in this work is shown in Fig.1.
About 4kg of Al-9Si or Al-12Si matrix alloy were placed in the crucible and heated to 150°C above its liquidus temperature (600°C).
[10] F.M.Fairouz, A.A.Daoud, M..T.Abou El-khair, Aging behavior and tensile properties of cast and squeezed 6061-SiC particles composites, 21tstInternational Conference on Composite Materials, Xi’an, 20-25th August 2017
Abou El-Khair, Wear and friction behavior of sand cast brake rotor made of A359-20vol% SiC particle composites sliding against automobile friction material, Tribology International, 43, 2010, 544-553 [20] V.S.Aigbodion, S.B.Hassan, Effect of silicon carbide reinforcement on microstructure and properties of cast Al-Si-Fe/SiC particulate composites, Materials Science and Engineering A, Vol. 447, 2007, 355-360

Abou El-khair et al. [7] studied the performance of cast ZrO2, SiC, or C reinforced ZA27 composites.
Acceptable limit of porosity level is a maximum of 4 % was reported by Alaneme et al. [15] for cast aluminum MMCs.
Abou El-khaira, A.
El-Sheikh, Mater.
[17] Rahman H, and Al H.

The shift of the diffraction lines indicates that lattice distortion occurs because of dissolution of Al.
The relationship between a, c, c/a or cell volume and Al content are shown in Fig.3 and Fig.4 respectively.
From the various trend of Ti3Si1.2-xAlxC2 solid solution, dissolution of Al is homogeneous, while x≤0.4 and 0.8≤x<1.2.
El-Raghy: Met.
El-Raghy: Met.

Effect of Sintering Temperature on the Formability and Pore Closure Behavior of Al-SiC Composites J.
Powder mixture corresponding to Al-10%SiC and Al-20%SiC were blended using a pot mill to obtain a homogeneous powder blend.
S et. al.,(1986)).
The microstructure of sintered pure Al without SiC addition showed more porosity than Al preforms with SiC additions.
El-Sheikh, “Workability in Forging of Powder Metallurgy Compacts”, Journal of Materials Processing Technology, Vol. 54, (1995),p. 97-102

Lodini 3,e 1 WFiIS, AGH University of Science and Technology, al.
Our numerical estimations show that in the case of steel the values of E el vary between 10 4 J/m 3 and 10 6 J/m 3.
Our main conclusion is that the orientations with minimum E el values have maximum E pl energy.
The grains with low values of E el fit better to the neighbouring material than other grains.
Our main observation is that the E pl maxima coincide with E el in the crystal orientation space.