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Phase Transition of GeSbTe Thin Films Induced by Thermal Treatment and Laser Irradiation Jing Chen1, Fei Yang1, Ling Xu1, a, Liang Tong1, Jun Xu1, Weining Su2, Yao Yu2, Zhongyuan Ma1 1National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Sciences and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, People’s Republic of China 2National Laboratory of Solid State Microstructures and School of Physics, Nanjing University, Nanjing 210093, People’s Republic of China a xuling@nju.edu.cn Keywords: Ge1Sb2Te4; phase change; annealing; laser irradiation; crystallization; AFM; Raman Abstract.
Annealing treatment was found to induce changes in microstructure, surface roughness, grain size and so on, indicating that with the increase of annealing temperature, the amorphous state of GST materials change first to face-centered-cubic (fcc) phase state and finally to the stable hexagonal(hex) state.
Introduction Chalcogenide phase-change materials, which refer to alloys containing at least one element of group VI [1], has gained considerable interest as a potential candidate for next decade nonvolatile memory [2,3], are widely used for data storage media.
Si wafer was used as the substrate material.
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Figure 3 shows a permeability testing setup for determining CG materials' hydraulic conductivity or permeability.
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Growth and characterization of seed layer-free ZnO thin films deposited on porous silicon by hydrothermal method, Electronic Materials Letters, 8 (1) 75-80
Sol–gel derived ZnO/porous silicon composites for tunable photoluminescence, Journal of Sol-Gel Science and Technology, 64 (1) 110-116
Surface Morphology of Seeded Nanostructured ZnO on Silicon by Sol-Gel Technique, Advanced Materials Research, 667 265-271
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Synthesis of Porous MoSi2 Material Fabricated by SHS (Self-Propagating High Temperature Synthesis) Process In-Hyuck Song a, Do-Wan Kim b, Jung-Yeul Yun c, Hai-Doo Kim d Department of Materials Engineering, Korea Institute of Machinery & Materials (KIMM), 66 Sangnam-dong, Changwon, 641-010, Korea a sih1654@kmail.kimm.re.kr, bbaecal@korea.com, c yjy1706@kmail.kimm.re.kr, dkhd1555@kmail.kimm.re.kr Keywords: SHS, MoSi2, Heating Element, Porous Materials Abstract.
By orienting the porous molybdenum disilicide-based material in the form of pore size gradient, porous materials used for filters with improved dirt-holding capacity can be manufactured.
The photograph of synthesized porous MoSi2 materials with variations in the composition and the preheating.
Acknowledgment This work was supported by the Center for Advanced Materials Processing (21C Frontier R&D Program of Korea Ministry of Science and Technology) under Grant No.
Feng, " Combustion Synthesis of Advanced Materials: Part I.

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