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Influence of anisotropy on specific loss components in grain oriented electrical steel Wojciech A.
This simplification cannot be used in a case of grain oriented electrical steel.
Kubota et.al.: Recent progress and future trend on grain-oriented silicon steel.
Ushigami et.al.: Recent development of low loss grain-oriented silicon steel.
New York, D. van Nostrand Co, 1956 [10] Yo Sakaki, An approach estimating the number of domain walls and eddy current losses in grain-oriented 3% Si-Fe tape wound cores, IEEE Trans. on Magnetics, 16 no 4 (1980) 569-572 [11] F.

Thus, if a sufficient number of grains in the gauge volume contribute to the diffraction peak, the measured peak is a superposition of many diffraction peaks, and the strain resolution of the technique is in practice much less than the 'worst case' estimates.
(Right) The pseudo-strain envelope for a collimation setting of S=0.05mm and D=1500mm for any position between the grain A and grain B.
The typical grain size of this material is 10×50×200µm3, with elongated pan-cake shaped grains (typically also containing subgrains).
Assuming a maximum 200µm grain size (not counting sub grains) this will be 5-6 grains between the grains A, B directly, so relatively poor powder averaging conditions.
Webster, VAMAS report number 38 (2000).

The abrasive grains are diamond and have a diameter of 8µm.
Because the grain diameter is relatively small, the grains could easily become buried in the rubber bond.
To prevent this, the abrasive grains were granulated with resin.
The grinding force becomes larger as the number of passes increases due to the residual stock removal.
Fig. 9 shows the relationship between the pass number and the normal grinding force.

Fig. 1 Grain size regimes of nanocrystalline, fine grained, ultrafine grained and coarse grained materials.
The grain boundary-mediated processes include grain boundary sliding, migration and grain rotation (H.
A number of studies confirm this trend; that the low ductility that is frequently reported for NS materials processed via two-step approaches can be attributed to the presence of processing flaws (P.G.
Large grains may have enough space within the grains for significant numbers of dislocations to intersect/tangle with each other and, consequently, accumulate during deformation.
Therefore, a number of published studies, published mostly after 2000, identify the issue of low ductility and describe strategies to improve ductility.

A small number of Ag atoms has a significant influence on the microstructure and mechanical properties, for this reason, some researchers to present of the Al-Cu-Mg-Ag system as a basic system for new high-strength aluminum alloys [12].
The concentration of copper in the central region of the α(Al) grain was ~ 1.1±0.1 wt. %, in an area close to the grain boundary ~ 2.1±0.1 wt. %.
The concentration of Mg in the central region of the α(Al) grain was ~ 0.3±0.05 wt. %, in an area close to the grain boundary ~ 0.5±0.05 wt. %.
This phase had crystallization origin and was discovered at grain boundaries.
The concentration in the central and peripheral areas of grain was (wt. %): ~ 2.1-Cu, 0.4-Ag; 0.5-Mg.

The number of turns was 10 (N = 10), that corresponded to the true strain of ~ 157.
The particles are distributed non-uniformly both inside grains and at grain boundaries.
High temperature of deformation leads to decrease in strength at the same number of turns of HPT.
However, some grains have a size up to 340 nm.
However, at the same time, the grains with blurred boundaries remain.

The bactericidal activity for the bacteria cells was estimated by relative number of bacteria survived calculated from the number of viable cells which from colonies on the nutrient agar plates.
The numbers of surviving bacteria on the mediums were counted after incubation.
Even though some grains are about 35-45 nm in diameter, the film is the amorphous structure according to XRD pattern.
Column-like structure is found at 450 ºC and some grains are 95 nm in diameter.
Fig.4 presents the relative number of bacteria survived after the photo-catalytic experiment.

As a new multifunctional material, strontium titanate (SrTiO3) ceramic has a wide application in grain boundary layer capacitor (GBLC) with the microstructure characteristics of semi-conductive crystalline grain and insulated boundary.
Grain boundary layer capacitor (GBLC) has very high apparent dielectric constant, can be used as every direct coupling bypass filtering and high performance electronic element, consequently it has a broad prospect of application [3].
Smooth microstructure of semi-conductive crystalline grain and insulated boundary makes up micro capacitors, which leads to tremendous coefficient of capacity, but this demands distinct grain boundary, namely smooth planarization surface.
The surface contour reveals that the machined surface has a large number of pits, and the depth of the pits is much larger than the height of the micro-peaks.
From the three-dimensional topography, few smaller micro-peaks and a large number of deep pits are clearly found, but the lapped surface is much flatter than the previous.

During the cooling process, the grain boundary α phase precipitates and grows up along the prior β grain boundaries.
Meanwhile, the nucleation of α phase occurs within the β grain, and it grows inside the β grain parallelly, finally transforming into the α colony.
It is obvious that the grain boundary α phase existed in TA6.5.
The solution treated samples exhibited a number of secondary α phase which precipitates in the original β phase after aging, and this secondary lamellar α phase improves the strength of the alloy effectively [17, 18].
A large number of dimples are discovered on the fracture surfaces after 650℃ tensile processes, as displayed by Fig. 8b, e and f.

With the extension of accelerated deposition time, the number and the size of the LSGM grains increase.
Another reason for the formation of large numbers of fine grains is high nucleation rate, which cover the whole surface of the substrate.
The following incident atoms will deposit on the grains.
Meanwhile, the fluctuation of signal grain means the island growths.
That might be with the shorter deposition time, the less number of deposition atoms.