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Chemical Vapor Deposition (CVD) of ZrC Coatings from ZrCl4-C3H6-H2

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Abstract:

ZrC coatings were prepared by CVD using ZrCl4, C3H6, and H2 as the precursors. The mechanisms responsible for the effects of deposition temperature, H2 flow rate and inlet C/Zr ratio on the ZrC coatings were studied based on the deposition mechanism of ZrC. The results indicate that the ZrC morphologies change from a loose spherical structure to a cauliflower structure, then to a glassy structure as the deposition temperature increases from 1050°C to 1150°C, then to 1250°C. The carbon content in the ZrC coatings increases with increasing the deposition temperature. Higher inlet C/Zr ratio can lead to rough surfaces and higher carbon content. Reasonable H2 concentration can inhibit carbon deposition, and lead to a cauliflower structure.

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Periodical:

Advanced Materials Research (Volumes 189-193)

Pages:

648-652

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.189-193.648

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Online since:

February 2011

Authors:

Qiao Mu Liu, Li Tong Zhang, Zhi Xin Meng, Lai Fei Cheng

Keywords:

Chemical Vapor Deposition (CVD), Mechanism, Surface Morphology, Zirconium Carbide

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© 2011 Trans Tech Publications Ltd. All Rights Reserved

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