Engineering Research
Materials Science
Engineering Series
Books by Keyword: Graphene
Books
The volume of journal "Nano Hybrids" offered for your attention covers practical aspects in the research and development of composite nano hybrid materials and structures and we hope this periodical will be useful for researchers and engineers in their every-day activity.
This book can have variety of readers, like graduate students and scientists/researcher, working on materilas science and engineering.
The 243 papers are grouped as follows:
I. SiC Growth;
I.1 Bulk Growth;
I.2 Epitaxial and Thin Film Growth;
II. SiC Theory and Characterization;
II.1 Fundamental and Material Properties;
II.2 Point and Extended Defects;
II.3 Surfaces and Interfaces;
III. SiC Processing;
III.1 Doping, Implantation and Contact;
III.2 Dielectric Growth and Characterization;
III.3 Etching and Machining;
IV. SiC Devices;
IV.1 Diodes;
IV.2 Field Effect Transistors;
IV.3 Other Devices;
V. Related Materials;
V.1 Other Carbon Based Materials;
V.2 Nitrides and Other Materials
The Monte Carlo method, largely the brainchild of Stanislaw Ulam and first implemented by John von Neumann, depends upon the use of digital computers and is therefore very much a product of post-WW2 technological developments; even though one could argue that the Buffon’s Needle estimate was an ancestor of the technique. The probabilistic nature of the method makes it a good choice for modeling those physical phenomena which involve similarly random motions at the atomic scale; a particularly good example being that of mass diffusion. The present volume comprises a compilation of selected Monte Carlo studies of diffusion in borides, carbides, diamond, graphene, graphite, hydrides, ice, metals, oxides, semiconductors, sulfides, zeolites and other materials. General aspects of diffusion are also covered. The 516 entries cover the period from 1966 to 2014.
The 25 papers are grouped as follows:
Chapter 1: 3C-SiC – Epitaxy, Characterization and Devices;
Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization;
Chapter 3: Related Materials – Gallium Nitride, Graphene and Silicon;
Chapter 4: SiC Devices and Device Processing
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 283 papers are grouped as follows:
Chapter 1: SiC Bulk Growth;
Chapter 2: SiC Epitaxial Growth;
Chapter 3: Physical Properties and Characterization of SiC;
Chapter 4: Processing of SiC;
Chapter 5: Devices and Circuits;
Chapter 6: Related Materials.