Books by Keyword: Graphene

Description:

The Monte Carlo method, largely the brainchild of Stanislaw Ulam and first implemented by John von Neumann, depends upon the use of digital computers and is therefore very much a product of post-WW2 technological developments; even though one could argue that the Buffon’s Needle estimate was an ancestor of the technique. The probabilistic nature of the method makes it a good choice for modeling those physical phenomena which involve similarly random motions at the atomic scale; a particularly good example being that of mass diffusion. The present volume comprises a compilation of selected Monte Carlo studies of diffusion in borides, carbides, diamond, graphene, graphite, hydrides, ice, metals, oxides, semiconductors, sulfides, zeolites and other materials. General aspects of diffusion are also covered. The 516 entries cover the period from 1966 to 2014.

Description: Collection of selected, peer reviewed papers from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France.
The 25 papers are grouped as follows:
Chapter 1: 3C-SiC – Epitaxy, Characterization and Devices;
Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization;
Chapter 3: Related Materials – Gallium Nitride, Graphene and Silicon;
Chapter 4: SiC Devices and Device Processing

Description: The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 283 papers are grouped as follows:
Chapter 1: SiC Bulk Growth;
Chapter 2: SiC Epitaxial Growth;
Chapter 3: Physical Properties and Characterization of SiC;
Chapter 4: Processing of SiC;
Chapter 5: Devices and Circuits;
Chapter 6: Related Materials.

Description: This periodical publishes research and review articles on hybrid nanomaterials such as inorganic-organic, inorganic-inorganic and organic-organic. It focuses on all aspects of nanoscience, nanotechnology and composites.

Description: Carbon has always been an essential feature of human civilisation (not to mention the human constitution), whether as mere fuel, as an expensive bauble or as an essential component of those two supporting pillars (organic chemicals, steel) of the industrial revolution. Even since its recognition as an element, 2¼ centuries ago, it has never ceased to offer new surprises and properties. Just decades ago, students had to contend with only two main forms, graphite and diamond, but nowadays there is a plethora of nanotubes, fullerenes, graphenes, etc. The present volume offers a compilation (over 400 items) of data on mass diffusion, in all of the various known allotropes of carbon, spanning some 6 decades.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The aim of this collection of peer-reviewed papers is to promote the open discussion of SiC hetero-epitaxy as related to the possibility of growing SiC on other materials and of growing various SiC polytypes so as to take advantage of the possibilities of band-gap engineering, These proceedings present the latest developments in Silicon Carbide, and the prospects for Gallium Nitride (GaN on Si, SiC, sapphire and free-standing) and Diamond power electronics. Finally, the progress made in Graphene technology, such as its introduction into devices and its relationship to SiC epitaxial material, is considered.

Description: Volume is indexed by Thomson Reuters BCI (WoS).
Carbon is an essential constituent element of all living organisms. A unique feature of carbon is the variety of forms that it can assume when two or more atoms bond. Carbon has thus attracted, and continues to attract, considerable R&D interest from researchers all over the world. The use of carbon in nanotechnology is a very promising area of research, and considerable government funding is being invested in carbon nanotechnology research.