Books by Keyword: Iron

Description: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.

Description: This special collection provides up-to-date knowledge concerning the field of functional materials such as shape memory alloys, piezoelectric ceramics and aluminium alloys. The articles therein also deal with recent investigations of quasicrystals and geopolymers: two classes of hybrid material that have attracted great scientific interest, given their unusual properties and potential engineering applications.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
In the first part, the papers address key issues concerning the application of two classes of functional alloy: (i) NiTi alloys, having important applications in the fields of smart structures and bioengineering; and (ii) CuAlBe alloys, as applied to non-welded pipe joints. In both classes, the papers focus upon industrial-scale examples associated with two classical metallurgical processes (electron-beam and conventional melting techniques).

Description: The goal of this special volume was to provide a unique opportunity to exchange information, present the latest results and to review relevant issues in contemporary diffusion research.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The Industrial Revolution showed that the development and improvement of new materials and functions could bring about social change, and benefit human society. However, one can be forgiven for feeling that more recent materials research, particularly in the domain of metals, has focused only upon individual elemental characteristics and narrow specialty fields, and that the original vision of materials research has thus been lost.

Description: These volumes contain the contributions presented at DIMAT 2004: the Sixth International Conference on Diffusion in Materials, held in Cracow, under the Patronage of the AGH University of Science and Technology, the Institute of Metallurgy and Materials Science of the Polish Academy of Sciences and the Cracow University of Technology.
Volume is indexed by Thomson Reuters CPCI-S (WoS)

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The degradation of materials and coatings in aggressive environments continues to be of great relevance to a wide range of industrial applications. The topic is of vital economic concern to the transportation, energy generation, and chemical processing industries in the developing, as well as the developed, nations of the world. The dual thrusts of conservation of resources and protection of the environment here strongly influence the tone of the technical submissions and thus again reflect the world-wide concern.

Description: This comprehensive volume covers practically all aspects concerning the passivity of metallic and semiconductor materials. Recent advances resulting from new materials in new environments, from metals and insulating films in multilayer structures, and from the chemical side of semiconductor technology are presented.

Description: Iron and silicon are the main impurites in aluminium: they are always present in alloys made from commercially pure base materials. Both impurities form various intermetallic compounds. These particles can cause basic changes in the macroscopic properties of the aluminium alloys and are thus of special technological interest.