Engineering Research
Advanced Engineering Forum
Applied Mechanics and Materials
Engineering Chemistry
Engineering Innovations
Journal of Biomimetics, Biomaterials and Biomedical Engineering
International Journal of Engineering Research in Africa
Materials Science
Advanced Materials Research
Defect and Diffusion Forum
Diffusion Foundations and Materials Applications
Journal of Metastable and Nanocrystalline Materials
Journal of Nano Research
Key Engineering Materials
Materials Science Forum
Nano Hybrids and Composites
Solid State Phenomena
Engineering Series
Advances in Science and Technology
Construction Technologies and Architecture
Engineering Headway
Books by Keyword: Iron
Books
Edited by:
H. Richter and M. Kittler
Online since: September 2003
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
Edited by:
R. Streiff, I.G. Wright, R.C. Krutenat, M. Caillet and A. Galerie
Online since: October 2001
Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
The degradation of materials and coatings in aggressive environments continues to be of great relevance to a wide range of industrial applications. The topic is of vital economic concern to the transportation, energy generation, and chemical processing industries in the developing, as well as the developed, nations of the world. The dual thrusts of conservation of resources and protection of the environment here strongly influence the tone of the technical submissions and thus again reflect the world-wide concern.
The degradation of materials and coatings in aggressive environments continues to be of great relevance to a wide range of industrial applications. The topic is of vital economic concern to the transportation, energy generation, and chemical processing industries in the developing, as well as the developed, nations of the world. The dual thrusts of conservation of resources and protection of the environment here strongly influence the tone of the technical submissions and thus again reflect the world-wide concern.
Edited by:
K.E. Heusler
Online since: March 1995
Description: This comprehensive volume covers practically all aspects concerning the passivity of metallic and semiconductor materials. Recent advances resulting from new materials in new environments, from metals and insulating films in multilayer structures, and from the chemical side of semiconductor technology are presented.
Edited by:
I. Kovacs
Online since: January 1990
Description: Iron and silicon are the main impurites in aluminium: they are always present in alloys made from commercially pure base materials. Both impurities form various intermetallic compounds. These particles can cause basic changes in the macroscopic properties of the aluminium alloys and are thus of special technological interest.