Description: Positron Annihilation - ICPA-10 presents new results and ideas of researchers who seek more profound understanding of the nature of positron annihilation. All these scientific and technological thoughts are included in these two-volume proceedings, which contain 7 review talks, 203 contributed papers (among them, 20 are invited), and 3 summary talks. The volume is complete with keyword and author indices.

Semiconductor Processing and Characterization with Lasers

Edited by: M. Briege, H. Dittrich, M. Klose, H.W. Schock, J. Werner

Online since: September 1994

Description: Lasers are playing an increasingly important role in various fields of semiconductor and device technology. Of special significance is their contribution to the advanced technologies that are needed for economic solutions in photovoltaics. There, lasers are used in processing and characterization of photovoltaic materials, solar cells and module technology.

Positron Annihilation - ICPA-9

Edited by: Zs. Kajcsos and Cs. Szeles

Online since: January 1992

Description: The volumes present over 400 reviewed papers on the present state of the art and future prospects in the wide field of research involving positrons. The foreword by Edward Teller and the summaries by Jean-Charles Abbe (Chemistry) and Alfred Seeger (Physics) demonstrate how the field is seen from "outside" and from "inside".

Compound Semiconductor Strained-Layer Superlattices

Authors: R.M. Biefeld

Online since: January 1989

Description: -Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices
-Metastability in Semiconductor Strained-Layer Structures
-The Morphology of MOCVD-Grown Semiconductor Multilayers
-Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures
-Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability
-The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices
-Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems
-II-VI Strained-Layer Semiconductor Superlattices

Gallium Arsenide III

Authors: P. Kordos

Online since: January 1989

Description:

This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility.