Books by Keyword: Semiconductor

Description: Dislocations were introduced into crystal physics, and particularly into the theory of plasticity, in 1934. For many years, they were the field of speculation of a small group of specialists, not considered seriously by real physicists and metallurgists. After W.T. Read Jr's fundamental work in 1953 and further developments by Cottrel, Friedel, Frank and Hirsch, dislocations had become part of the working vocabulary of solid-state physics and metallurgy.

Description: For one and a half decades, the application of positron annihilation to condensed-matter physics concentrated on the study of the Fermi surfaces of metals and alloys. As other, often more powerful, techniques for performing this type of study were developed, it appeared that condensed-matter positron physics was going to be relegated to being a niche interest. However, the situation changed dramatically when it was found that measurements of positron annihilation in metals were sensitive to the structures of well-known defects. This discovery, and subsequent research made it a major tool in materials science.
Volume is indexed by Thomson Reuters CPCI-S (WoS).

Description: Journal issue

Description: Journal issue

Description: This comprehensive volume covers practically all aspects concerning the passivity of metallic and semiconductor materials. Recent advances resulting from new materials in new environments, from metals and insulating films in multilayer structures, and from the chemical side of semiconductor technology are presented.

Description: Positron Annihilation - ICPA-10 presents new results and ideas of researchers who seek more profound understanding of the nature of positron annihilation. All these scientific and technological thoughts are included in these two-volume proceedings, which contain 7 review talks, 203 contributed papers (among them, 20 are invited), and 3 summary talks. The volume is complete with keyword and author indices.

Description: Lasers are playing an increasingly important role in various fields of semiconductor and device technology. Of special significance is their contribution to the advanced technologies that are needed for economic solutions in photovoltaics. There, lasers are used in processing and characterization of photovoltaic materials, solar cells and module technology.

Description: The volumes present over 400 reviewed papers on the present state of the art and future prospects in the wide field of research involving positrons. The foreword by Edward Teller and the summaries by Jean-Charles Abbe (Chemistry) and Alfred Seeger (Physics) demonstrate how the field is seen from "outside" and from "inside".

Description: -Effect of Internal Piezoelectric Fields on the Electronic Structure and Optical Properties of Strained-Layer Superlattices
-Metastability in Semiconductor Strained-Layer Structures
-The Morphology of MOCVD-Grown Semiconductor Multilayers
-Electrical Transport Studies of InGaAs/GaAs Strained-Layer Quantum-Well Structures
-Device Structures Based on GaAsP/InGaAs Strained Layer Superlattices and Their Stability
-The Preparation and Infrared Properties of In (AsSb) Strained-Layer Superlattices
-Ion Implantation of III-V Compound Semiconductor Strained-Layer Semiconductors Systems
-II-VI Strained-Layer Semiconductor Superlattices

Description:

This issue is based on proceedings of the 3rd International Conference on Physics and Technology of GaAs and other III-V Semiconductors, Lomnica, CSFR, December 1988. The collected articles present research results in studies of crystal properties and preparation methods of gallium arsenide and the use of gallium arsenide as a semiconductor compound with high electron mobility.