Books by Keyword: Solar Cell

Description: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors’ fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed

Description: This extensive collection of papers presents new results focussing on advanced nanomaterials and their processing.
Volume is indexed by Thomson Reuters CPCI-S (WoS).
Over 460 papers have been selected, for this special issue, covering three main fields: Electronic Materials Processing and Fabrication, Development of Functional Materials, and Nano and Structural Materials., These are the essential foundations of the NanoMaterials currently undergoing research and development.

Description: This collection presents 31 papers. Altogether, the collection offers a wealth of up-to-date information on Disclosing Materials at the Nanoscale.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.

Description: Volume is indexed by Thomson Reuters CPCI-S (WoS).
This book comprises the over 100 contributions that were presented at the International Conference on Polycrystalline Semiconductors which took place from September 10 to 13, 2002, in Nara, Japan.

Description: This book comprises the contributions to the sixth conference on polycrystalline semiconductors (POLYSE).
Volume is indexed by Thomson Reuters CPCI-S (WoS).
The conference covered many aspects of polycrystalline semiconductors, but was more applications-oriented than on previous occasions; thereby reflecting the rapid evolution of these technologies. POLYSE 2000 brought together research specialists from >basic research, as well as from research & development engineering, all of whom are working on devices such as thin-film transistors, micro-electromechanical systems, or sensors and actuators. In particular, ten internationally recognized scientists (J. Morante, S.Périchon, M. Konagai, S. Wagner, R. Hagenbeck, D.A. Bonnell, G. Horowitz, T.Fuyuki, J. Kocka and V. Chuwere) were invited to review their work on several interesting and promising aspects of the subject: such as, micro-systems, solar cells, thin-film transistors, organic polycrystalline devices and polycrystalline ceramics.

Description: Like the previous conferences in this series, POLYSE '98 covered many aspects of polycrystalline semiconductors. Whereas earlier proceedings had included many contributions on basic research, for example on the structural properties of single grain boundaries, later proceedings had included more articles on solar cells and thin-film transistors, seemingly marking a transition to a more technology-oriented conference. However, the contributions to POLYSE '98 show that the POLYSE-series is again bringing together researchers from basic research as well as engineers working on devices.

The 84 papers cover topics such as: beam-induced currents, thin-film silicon, silicon crystallization, oxide semiconductor films, chalcogenide and spinel films, chalcopyrite films, thin-film junctions and devices; thus providing an extensive survey of the most recent results in polycrystalline semiconductor research.

Description: The 5th International Workshop on Beam Injection Assessment of Defects in Semiconductors (BIADS 98) focussed on many theoretical and experimental aspects of this topic. The aim was to bring together specialists working in the fields of both fundamental research and applications. There were more than 80 participants from 15 countries all over the world.

Description: The subject area of electronic devices has undergone a rapid expansion in recent years. New developments are continually accurring all over the world. Progress in the field of electronic devices is, however, dependent upon the production and characterization of device grade material. The science and technology of electronic materials has attracted somewhat less attention, as compared with device development.