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Solid-State Power Devices: Circuitry and Characterizations
Description:
The relentless advancement in high-power electronics has driven the need for innovative materials and new device architectures. This special edition delves readers into the cutting-edge developments and challenges in the field, with a focus on silicon carbide (SiC) technology. The edition provides a comprehensive overview of the critical aspects of SiC MOSFETs, highlighting their superior switching characteristics and robustness, etc., compared to traditional silicon-based devices. Collected articles not only focus on the theoretical underpinnings but also provide practical insights for engineers in design and real-world applications.
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978-3-0364-1633-5
$190.00 *
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978-3-0364-0633-6
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978-3-0364-0633-6
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Info:
eBook:
ToC:
Editors:
Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio
THEMA:
PDT, TGM, TJ
BISAC:
SCI050000, TEC008000, TEC021000
Keywords:
Details:
Special topic volume with invited peer-reviewed papers only
Pages:
224
Year:
2024
ISBN-13 (softcover):
9783036406336
ISBN-13 (eBook):
9783036416335
Permissions CCC:
Permissions PLS:
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Ringgold Subjects:
Materials Science, Electronics, Nanoscience