Paper Titles
Preparation of CaBi4Ti4O15 Based Thick Films on Si Substrates by Screen Printing
p.50
Effects of Compressive Stress on Dielectric Properties of Lead-Free (Bi1/2Na1/2)TiO3-(K1/2Na1/2)NbO3 Ceramic Systems
p.54
Dielectric Properties of Low-Temperature Sintered Ba0.6Sr0.4TiO3 Ceramics by Addition of Bi2O3-CuO Mixed Oxides
p.61
Investigation on the Effect of Mn on the Dielectric Properties of Ba0.4Sr0.6TiO3/MgAl2O4/MgO Composite Ceramics
p.65
B-O Bond Character and Microwave Dielectric Properties of (1-x)CaTiO3-xCa(Zn1/3Nb2/3)O3 Perovskite Ceramics
p.69
Microwave Characterization Techniques for High K Thin Films
p.73
Origin of High Q for Microwave Complex Perovskite
p.77
ZnO Nanoarrays Film Grown by Forced-Hydrolysis-Initiated-Nucleation Technique and its Photo-Induced Electrical Property
p.83
Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium
p.87

B-O Bond Character and Microwave Dielectric Properties of (1-x)CaTiO3-xCa(Zn1/3Nb2/3)O3 Perovskite Ceramics

Article Preview

Abstract:

The relationship between the character of the B-site cation–oxygen bond and the microwave dielectric properties in perovskites dielectric materials was studied in this paper. The atomic net charge of CaTiO3 (CT) and Ca(Zn1/3Nb2/3)O3 (CZN) was calculated respectively. The calculating result implies that the covalency of B-O bonds in CZN is stronger than that in CT. This predicted that the dielectric constant and loss of the ceramics will decrease after CZN incorporated in CT. To confirme the prediction, (1-x)CT-xCZN microwave dielectric ceramics were prepared by solid state reaction method with ZnNb2O6 as precursor. The structure analysis in terms of tolerance factor gives an identical result as calculation. The microwave dielectric properties, such as dielectric constants, Q×f values and τf were studied as a function of composition. With x increasing from 0.2 to 0.8, the dielectric constant linearly decreases from 109 to 49.37, the Q×f value increases from 8,340 to 13,200 GHz, and τf decreases from 321 to -18 ppm/°C. The properties trends are consistent with the previous calculation results, and confirm the relationship between the character of B-O bond and dielectric properties.

You might also be interested in these eBooks
Asian Ceramic Science for Electronics III and Electroceramics in Japan XII View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Pages:

69-72

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.421-422.69

Citation:

Cite this paper

Online since:

December 2009

Authors:

Jie Shen, Wen Chen, Jing Zhou, Jie Zhu, Qiong Lei

Keywords:

(1-x)CaTiO3-xCa(Zn1/3Nb2/3)O3, Bond Character, Dielectric Property, Tolerance Factor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2010 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] H. Kagata, J. Kato, Jpn. J. Appl. Phys., 33 (1994), p.5463.

Google Scholar

[2] R. C. Kell, A. C. Greenham, G. C. E. Olds, J. Am. Ceram. Soc., 56 (1973), p.352.

Google Scholar

[3] B. Delley,J. Chem. Phys., 92(1990), p.508.

Google Scholar

[4] R. H. Buttner and E. N. Maslen, Acta Crystallogr. B, 48 (1992), p.644.

Google Scholar

[5] X. M. Chen, D. Liu, R. Z. Hou, X. Hu and X. Q. Liu, J. Am. Ceram. Soc., 87 (2004), p.2208.

Google Scholar

[6] M. Reaney, E. L. Colla, N. Setter, Jpn. J. Appl. Phys., 3984 (1994) 33.

Google Scholar

[7] Y. Tsuji, A. Kan, H. Ogawa and S. Ishihara, J. Eur. Ceram. Soc., 25 (2005), p.2883.

Google Scholar

[8] H. Ogawa, H. Taketani, A. Kan, A Fujita and G. Zouganelis, J. Eur. Ceram. Soc., 25 (2005), p.2859.

Google Scholar

[9] R. D. Shannon, Acta Crystallogr. A, 32 (1976) , p.751.

Google Scholar

[10] D. M. Iddles, A. J. Bell, A. J. Moulson, J. Mater. Sci., 27 (1992), p.6303.

Google Scholar

[11] R. Zurmuhlen, E. Colla and N. Setter, J. Appl. Phys., 77 (1995), p.5341. e-mail: chenw@whut. edu. cn Fax: +86-27-87864580.

Google Scholar