Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium

Masaki Hirano; Kazuhisa Kawano; Hiroshi Funakubo

doi:10.4028/www.scientific.net/KEM.421-422.87

Paper Titles

B-O Bond Character and Microwave Dielectric Properties of (1-x)CaTiO₃-xCa(Zn_1/3Nb_2/3)O₃ Perovskite Ceramics
p.69

Microwave Characterization Techniques for High K Thin Films
p.73

Origin of High Q for Microwave Complex Perovskite
p.77

ZnO Nanoarrays Film Grown by Forced-Hydrolysis-Initiated-Nucleation Technique and its Photo-Induced Electrical Property
p.83

Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium
p.87

Effects of UV Irradiation on Microstructure and Properties of HfO₂ Films Prepared from Alkoxy-Derived Precursor Solution
p.91

Measurement of d₁₅ Shear-Mode Piezoelectric Response in PZT Thin Film
p.95

Polarized Raman Study for Epitaxial PZT Thick Film with the Mixture Orientation of (100)/(001)
p.99

Effect of PAA-NH₄ Dispersant on Dispersibility of Aqueous Pb(Zr, Ti)O₃ Slurries and Piezoelectric Properties of Resultant Sintered Bodies
p.103

HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Effect of Incubation Time on Deposition Behavior...

Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium

Abstract:

The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER) - O2 system. Substrates with amorphous top-layer having various Hf/Si ratio, SiO2 (native oxide)/(001)Si (SiO2), HfSiON/SiON/(001)Si (HfSiON) and HfO2/SiON/(001)Si (HfO2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210 oC to 300 oC revealed that the deposition amount depended on the deposition temperature below 250 oC, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210 oC and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.