Origin of High Q for Microwave Complex Perovskite

Hitoshi Ohsato; Eiichi Koga; Isao Kagomiya; Kenichi Kakimoto

doi:10.4028/www.scientific.net/KEM.421-422.77

Paper Titles

Dielectric Properties of Low-Temperature Sintered Ba_0.6Sr_0.4TiO₃ Ceramics by Addition of Bi₂O₃-CuO Mixed Oxides
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Investigation on the Effect of Mn on the Dielectric Properties of Ba_0.4Sr_0.6TiO₃/MgAl₂O₄/MgO Composite Ceramics
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B-O Bond Character and Microwave Dielectric Properties of (1-x)CaTiO₃-xCa(Zn_1/3Nb_2/3)O₃ Perovskite Ceramics
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Microwave Characterization Techniques for High K Thin Films
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Origin of High Q for Microwave Complex Perovskite
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ZnO Nanoarrays Film Grown by Forced-Hydrolysis-Initiated-Nucleation Technique and its Photo-Induced Electrical Property
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Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium
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Effects of UV Irradiation on Microstructure and Properties of HfO₂ Films Prepared from Alkoxy-Derived Precursor Solution
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Measurement of d₁₅ Shear-Mode Piezoelectric Response in PZT Thin Film
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HomeKey Engineering MaterialsKey Engineering Materials Vols. 421-422Origin of High Q for Microwave Complex Perovskite

Origin of High Q for Microwave Complex Perovskite

Abstract:

Origins of high Q are considered on intrinsic as high symmetry, ordering structure and high density crystal structure. It was concluded that the high symmetry brings high Q instead of ordering comparing some cases as follows: As if ordering ratio of Ba(Zn1/3Ta2/3)O3 (BZT) is high of about 80%, Q values are distributed from low to high Q. Disordered BZT ceramics with high density obtained for short sintering time by spark plasma sintering (SPS) showed high Q. Ba(Zn1/3Nb2/3)O3 (BZN) with order-disorder transition showed high Q at disorder form sintered over the transition temperature. And, the disordered BZN with high Q annealed at lower temperature changed to order structure without improvement of Q.