Papers by Keyword: Transfer Characteristic

Abstract: In order to better play an important role in the subway transit system to achieve its dominant position, it is necessary to establish a good feeding system and interface transfer system. On the basis of the current study urban passenger transfer characteristics, the study of urban rail transport passenger transfer is essential. Shenyang Subway Line 1 eased the pressure on the ground transportation of city to a large extent from the completion of construction to be put into use. In this paper, inquirer survey method, induction contrast method and comparative analysis method are selected to investigate the traffic of the each site in Shenyang subway lines, and analyze the characteristics of the passenger transfer, so that the subway planning operator can be gradually improved and the operational organization can be better guided.

Abstract: This article uses the method of frequency characteristic to analysis transfer characteristics of Rogowski coil. In the case of the composite frequency signal, Rogowski coil transfer ratio is the function of frequency, that is the transfer ratio varies with the frequency, which makes the signal of the secondary side not restore to the primary side. The simulation results prove the conclusion. In view of the situation, this paper presents an ideal transfer ratio, which provides the reference standard for correcting the frequency characteristics of the Rogowski coil integrating circuit.

Abstract: Recently polycrystalline silicon (pc-Si) thin film transistors (TFT’s) have emerged as the devices of choice for many applications. The TFTs made of a thin un-doped polycrystalline silicon film deposited on a glass substrate by the Low Pressure Chemical Vapor Deposition technique LPCVD have limits in the technological process to the temperature < 600°C. The benefit of pc-Si is to make devices with large grain size. Unfortunately, according to the conditions during deposition, the pc-Si layers can consist of a random superposition of grains of different sizes, where grains boundaries parallels and perpendiculars appear. In this paper, the transfer characteristics IDS-VGS are simulated by solving a set of two-dimensional (2D) drift-diffusion equations together with the usual density of states (DOS: exponential band tails and Gaussian distribution of dangling bonds) localized at the grains boundaries. The impact of thickness of the active layer on the distribution of the electrostatic potential and the effect of density of intergranular traps states on the TFT’s transfer characteristics IDS-VGS have been also investigated.

Abstract: The desorption process for ambient atmosphere on electrical transport properties of bilayer graphene FET grown by CVD methods on SiO2/Si substrate was investigated in room temperature. With increasing the vacuum time of the device underwent, we found that the voltage of Dirac point decreased, the mobility of hole (electron) increased and the charged impurity density decreased. The results suggest that the atmospheric adsorbates (mainly oxygen and water molecules) are strongly influence the electrical transport properties of graphene FET.