Paper Titles
3× 1018 - 1 × 1019 cm -3 Al+ Ion Implanted 4H-SiC: Annealing Time Effect
p.683
Intentional and Unintentional Channeling during Implantation of p-Dopants in 4H-SiC
p.689
Ion Implanted Phosphorous for 4H-SiC VDMOSFETs Source Regions: Effect of the Post Implantation Annealing Time
p.698
4H-SiC MOSFET Source and Body Laser Annealing Process
p.705
The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing
p.712
Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC
p.718
Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology
p.725
Development of SiC Etching by Chlorine Fluoride Gas
p.731
The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices
p.738

The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Article Preview

Abstract:

The preparation of ohmic contact with high stability and low resistance is critical, and the quality of ohmic contact will directly affect the performance of devices as the efficiency, gain and switching speed. In this work, the I-V characteristic of the 4H-SiC devices under rapid thermal annealing and pulsed laser annealing were compared, the pulsed laser annealing process could obtain the lower ohmic contact resistant. The surface morphology, material composition, and elemental analysis were clarified by optical microscopy (OM), X-ray diffraction (XRD) and Energy Dispersive Spectroscopy (EDS), respectively. This research suggests that more Ni2Si and carbon vacancy can form at the interface under pulsed laser annealing.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2019 View Preview

Info:

Periodical:

Materials Science Forum (Volume 1004)

Pages:

712-717

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.712

Citation:

Cite this paper

Online since:

July 2020

Authors:

Zi Wei Zhou*, Zhen Zhong Zhang, Wei Wei He, Jian Yong Hao, Jun Sun, Feng Zhang, Ze Dong Zheng

Keywords:

4H-SiC, Laser Annealing, Ni, Ohmic Contact, RTA

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2020 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] A. Koizumi, J. Suda, T. Kimoto, Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers, J. Appl. Phys. 106 (2009) 013716.

DOI: 10.1063/1.3158565

Google Scholar

[2] G. Liu, B.R. Tuttle, S. Dhar, Silicon carbide: A unique platform for metal-oxide-semiconductor physics, Appl. Phys. Rev. 2 (2015) 021307.

DOI: 10.1063/1.4922748

Google Scholar

[3] R. Palmieri, H. Boudinov, C. Radtke, Jr.E.F. da Silva, Effect of the oxidation process on SiO2/4H-SiC interface electrical characteristics, Appl. Surf. Sci. 255 (2008) 706-708.

DOI: 10.1016/j.apsusc.2008.07.014

Google Scholar

[4] Y. Mikamura, K. Hiratsuka, T. Tsuno, H. Michikoshi, S. Tanaka, T. Masuda, K. Wada, T. Horii, J. Genba, T. Hiyoshi, T. Sekiguchi, Novel designed SiC devices for high power and high efficiency systems, IEEE T. Electron Dev. 62 (2015) 382-389.

DOI: 10.1109/ted.2014.2362537

Google Scholar

[5] S.Y. Han, K.H. Kim, J.K. Kim, H.W. Jang, K.H. Lee, N.K. Kim, E.D. Kim, J.L. Lee, Ohmic contact formation mechanism of Ni on n-type 4H–SiC, Appl. Phys. Lett. 79 (2001) 1816-1818.

DOI: 10.1063/1.1404998

Google Scholar

[6] F. Roccaforte, F. La Via, V. Raineri, Ohmic contacts to SiC, International journal of high speed electronics and systems 15 (2005) 781-820.

DOI: 10.1142/s0129156405003429

Google Scholar

[7] S.Y. Jiang, X.Y. Li, Z.Z. Chen, Role of w in w/ni bilayer ohmic contact to n-type 4H-SiC from the perspective of device applications, IEEE T. Electron Dev. 65 (2018) 641-647.

DOI: 10.1109/ted.2017.2784098

Google Scholar

[8] R. Gong, J. Wang, S. Liu, Z. Dong, M. Yu, C.P. Wen, Y. Cai, B. Zhang, Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors, Appl. Phys. Lett. 97 (2010) 062115.

DOI: 10.1063/1.3479928

Google Scholar

[9] R. Rupp, R. Kern, R. Gerlach, Laser backside contact annealing of SiC power devices: A prerequisite for SiC thin wafer technology, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE (2013) 51-54.

DOI: 10.1109/ispsd.2013.6694396

Google Scholar

[10] M. De Silva, T. Kawasaki, S. Kuroki, Low resistance Ti5Si3/TiC ohmic contact on ion-implanted n-Type 4H-sic C face, Mater. Sci. Forum. Trans. Tech. Publications 924 (2018) 409-412.

DOI: 10.4028/www.scientific.net/msf.924.409

Google Scholar

[11] I.P. Nikitina, K.V. Vassilevski, N.G. Wright, A.B. Horsfall, A.G. O'Neill, Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide, J. Appl. Phys. 97(2005) 083709.

DOI: 10.1063/1.1872200

Google Scholar

[12] G. Hui, Z. Yimen, Z. Yuming, Evidence of the role of carbon vacancies in nickel-based ohmic contacts to n-type silicon carbide, J. Semi. 28 (2006) 5.

Google Scholar

[13] J. Crofton, P.G. McMullin, J.R. Williams, M.J. Bozack, High-temperature ohmic contact to n‐type 6H-SiC using nickel, J. Appl. Phys. 77 (1995) 1317-1319.

DOI: 10.1063/1.358936

Google Scholar

[14] M.W. Cole, P.C. Joshi, C.W. Hubbard, M.C. Wood, M.H. Ervin, B. Geil, Improved Ni based composite ohmic contact to n-SiC for high temperature and high power device applications, J. Appl. Phys. 88 (2000) 2652-2657.

DOI: 10.1063/1.1287776

Google Scholar

[15] S.A. Pérez-García, L. Nyborg, Application of angle-resolved XPS for characterization of SiC/Ni2Si thin film systems, Surf. Interface Anal. 38 (2006) 859-862.

DOI: 10.1002/sia.2215

Google Scholar

[16] K. Ip, S. Nigam, K.H. Baik, F. Ren, G.Y. Chung, B.P. Gila, S.J. Pearton, Stability of SiC schottky rectifiers to rapid thermal annealing, J. Electrochem. Soc. 150 (2003) G293-G296.

DOI: 10.1149/1.1560953

Google Scholar

[17] L.J. Ci, B.Q. Wei, C.L. Xu, J. Liang, D.H. Wu, S.S. Xie, W.Y. Zhou, Y.B. Li, Z.Q. Liu, D.S. Tang, Crystallization behavior of the amorphous carbon nanotubes prepared by the CVD method, J. Cryst. Growth 233 (2001) 823-828.

DOI: 10.1016/s0022-0248(01)01606-2

Google Scholar

[18] S.Y. Han, J.Y. Shin, B.T. Lee, J.L. Lee, Microstructural interpretation of Ni ohmic contact on n-type 4H–SiC, J. Vac. Sci. Technol. B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 20 (2002) 1496-1500.

DOI: 10.1116/1.1495506

Google Scholar

[19] S. Ferrero, A. Albonico, U.M. Meotto, G. Rombolà, S. Porro, F. Giorgis, D. Perrone, L. Scaltrito, E. Bontempi, L.E. Depero, G. Richieri, L. Merlin, Phase formation at rapid thermal annealing of nickel contacts on C-face n-type 4H-SiC, Mater. Sci. Forum. Trans. Tech. Publications 483 (2005) 733-736.

DOI: 10.4028/www.scientific.net/msf.483-485.733

Google Scholar

[20] I.P. Nikitina, K.V. Vassilevski, N.G. Wright, A.B. Horsfall, A.G. O'Neill, Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n-type silicon carbide, J. Appl. Phys. 97 (2005) 083709.

DOI: 10.1063/1.1872200

Google Scholar

[21] F.A. Mohammad, Y. Cao, L.M. Porter, Ohmic contacts to silicon carbide determined by changes in the surface, Appl. Phys. Lett. 87 (2005) 161908.

DOI: 10.1063/1.2106005

Google Scholar