Development of SiC Etching by Chlorine Fluoride Gas

Yoshinao Takahashi; Korehito Kato; Hitoshi Habuka

doi:10.4028/www.scientific.net/MSF.1004.731

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The Waffle Substrate: A Novel Approach to Reducing Substrate Resistance in SiC Power Devices
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Development of SiC Etching by Chlorine Fluoride...

Development of SiC Etching by Chlorine Fluoride Gas

Abstract:

Amorphous SiC and 4H-SiC were etched by chlorine fluoride (ClF), chlorine trifluoride (ClF₃), fluorine (F₂) and chlorine (Cl₂) gases, in order to evaluate the etching capability of various reactive gases. The gaseous byproducts of SiC etching were observed by the quadrupole mass spectrometry. The ClF showed slow etching rate of amorphous SiC and 4H-SiC, while ClF₃ and F₂ quickly etched them. By the ClF gas, the etching rate of amorphous SiC was 120 nm/min at 400 °C. The ClF gas was expected to be suitable for a shallow etching, because of its moderate etching rate even at high temperatures.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

731-737

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.731

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Online since:

July 2020

Authors:

Yoshinao Takahashi*, Korehito Kato, Hitoshi Habuka

Keywords:

4H-SiC, Chlorine Fluoride Gas, Etching

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