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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Challenges in Extremely Low Specific On-Resistance...

Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs

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Abstract:

A 0.63 mΩcm² / 1170 V property was demonstrated in a 4H-SiC V-groove trench MOSFET with a super junction (SJ) structure. Successful results in SJ-VMOSFETs will inspire research on 600 to 1200 V class devices as their extreme high MOS channel mobility and the SJ structure is promising.

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Silicon Carbide and Related Materials 2019

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

758-763

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.758

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Online since:

July 2020

Authors:

Takeyoshi Masuda*, Yu Saito, Tomoaki Hatayama, Hisato Michikoshi, Yasuki Mikamura, Shinsuke Harada

Keywords:

{0-33-8} Face, Multi-Epitaxial Growth, Super Junction, Trench, Vertical MOSFET, V-Groove

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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