Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation

Yutaka Fukui; Katsutoshi Sugawara; Rina Tanaka; Hidenori Koketsu; Hideyuki Hatta; Yusuke Miyata; Hiroyoshi Suzuki; Kensuke Taguchi; Yasuhiro Kagawa; Shingo Tomohisa; Naruhisa Miura

doi:10.4028/www.scientific.net/MSF.1004.764

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Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation

Abstract:

A trench gate SiC-MOSFET with BPW grounded by tilted Al implantation is developed in order to optimize the cell design and process for grounding the BPW in a more simple manner. From evaluation of static characteristics, the MOSFETs with sidewall region can improve the trade-off relationship between R_on,sp and V_bd by the variation of d_SRs, and is superior than that of conventional BPW ground contact structure. From evaluation of dynamic characteristics, the MOSFETs with sidewall region can realize stable p-type ohmic contact for BPW compared with conventional BPW ground contact structure. Furthermore, the trade-off between R_on,sp and t_sc of this device is adjusted to optimized layout of the p-type sidewall regions without degradation of the dV/dt dependence of turn-on and turn-off losses.