1200 V / 200 A V-Groove Trench MOSFET Optimized for Low Power Loss and High Reliability

Kosuke Uchida; Toru Hiyoshi; Yu Saito; Hiroshi Egusa; Tatsushi Kaneda; Hirotaka Oomori; Takashi Tsuno

doi:10.4028/www.scientific.net/MSF.1004.776

Paper Titles

The IMOSFET: A Deeply-Scaled Fully-Self-Aligned Trench MOSFET
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Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation
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Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies
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HomeMaterials Science ForumMaterials Science Forum Vol. 10041200 V / 200 A V-Groove Trench MOSFET Optimized...

1200 V / 200 A V-Groove Trench MOSFET Optimized for Low Power Loss and High Reliability

Abstract:

1200 V / 200 A V-groove trench MOSFET optimized to achieve low power loss, high oxide reliability under a drain bias condition and high avalanche ruggedness is shown in this paper. We revealed a relationship between the lifetime under a high temperature reverse bias condition and the oxide electric field. In accordance with the results of the test, the 1200 V / 200 A trench MOSFET showed an improvement in the tradeoff between the on-resistance and oxide electric field with the presence of current spreading layers. In order to obtain low on-resistance and high avalanche ruggedness at the same time, buried guard ring structures, which made the blocking voltage of the edge termination area higher than that of the active area, was developed. The fabricated MOSFETs demonstrated a low specific on-resistance of 3.1 mΩ cm². A predicted lifetime of 200 years under a high temperature drain bias condition of 1200 V was achieved by the optimized design. A short circuit withstand time of 6 μs and a high avalanche energy of 7.8 J/cm² were shown.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

776-782

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.776

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Online since:

July 2020

Authors:

Kosuke Uchida*, Toru Hiyoshi, Yu Saito, Hiroshi Egusa, Tatsushi Kaneda, Hirotaka Oomori, Takashi Tsuno

Keywords:

Avalanche Ruggedness, Low On-Resistance, Oxide Electric Field, Reliability, Short Circuit, Switching Characteristics, Threshold Voltage Shift, Trench, V-Groove

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