Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies

Ki Jeong Han; Ajit Kanale; B. Jayant Baliga; Subhashish Bhattacharya

doi:10.4028/www.scientific.net/MSF.1004.783

Paper Titles

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Effects of Grounding Bottom Oxide Protection Layer in Trench-Gate SiC-MOSFET by Tilted Al Implantation
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Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation
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Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies
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Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS
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Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD
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Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Demonstration of Superior Static, Dynamic, and...

Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies

Abstract:

The electrical characteristics of the 1.2-kV rated 4H-SiC accumulation-channel split-gate octagonal cell MOSFET (SG-OCTFET) are experimentally compared with linear, square, hexagonal, octagonal, and compact-octagonal cell topologies. The specific on-resistance of the SG-OCTFET is 52% larger than the conventional linear cell topology. However, the SG-OCTFET has: (i) high-frequency figure-of-merit HFFOM[R_on×C_gd] 9.4×, 6.1×, 2.6×, 2.0×, and 1.8× superior to the square, hex, linear, octagonal, and compact-octagonal cells; (ii) fastest switching performance among all cell topologies, with 26% smaller switching energy loss than the conventional linear cell topology; and (iii) short circuit capability 1.5× longer than the conventional linear cell topology. The SG-OCTFET device is therefore an optimum candidate for high frequency applications of SiC MOSFETs.

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Periodical:

Materials Science Forum (Volume 1004)

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783-788

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.783

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Online since:

July 2020

Authors:

Ki Jeong Han*, Ajit Kanale, B. Jayant Baliga, Subhashish Bhattacharya

Keywords:

Cell, Hexagonal, High Frequency FOM, MOSFET, Octagonal, Reverse Transfer Capacitance, Short-Circuit Ruggedness, Split Gate, Square, Switching Performance

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References

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