Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET

Tian Xiang Dai; A. Benjamin Renz; Lu Yang Zhang; Oliver James Vavasour; G.W.C. Baker; Vishal A. Shah; Philip  Andrew Mawby; Peter Michael Gammon

doi:10.4028/www.scientific.net/MSF.1004.808

Paper Titles

Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies
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Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs
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Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS
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Investigation on the Effect of Total Loss Reduction of HV Power Module by Using SiC-MOSFET Embedding SBD
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Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET
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Investigation into the Body Diode Degradation of 6.5 kV SiC MOSFETs
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Commercialization of Highly Rugged 4H-SiC 3300 V Schottky Diodes and Power MOSFETs
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Experimental Analysis of 600V 4H-SiC Vertical and Lateral MOSFETs Fabricated on the same 6-Inch Substrate Using a Single Process
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Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Design and Optimisation of Schottky Contact...

Design and Optimisation of Schottky Contact Integration in a 4H-SiC Trench MOSFET

Abstract:

Planar Schottky contact and various trench Schottky contacts have been integrated into the edge termination region of a 4H-SiC trench metal-oxide-semiconductor field-effect-transistor (MOSFET). The forward and reverse characteristics of various design splits have been benchmarked to determine the optimum method of the Schottky contact integration. As a result, the trench Schottky diode with Schottky metal contact in both the planar surface and the trench sidewall surface has been able to offer the best performance.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

808-813

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.808

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Online since:

July 2020

Authors:

Tian Xiang Dai*, A. Benjamin Renz, Lu Yang Zhang, Oliver James Vavasour, G.W.C. Baker, Vishal A. Shah, Philip Andrew Mawby, Peter Michael Gammon

Keywords:

4H-SiC, Edge Termination, Integration, Schottky, Trench MOSFET

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